发明授权
- 专利标题: Electron field emission device
- 专利标题(中): 电子场发射装置
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申请号: US629954申请日: 1990-12-19
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公开(公告)号: US5243252A公开(公告)日: 1993-09-07
- 发明人: Akira Kaneko , Toru Kanno , Kaoru Tomii
- 申请人: Akira Kaneko , Toru Kanno , Kaoru Tomii
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX1-330740 19891219; JPX2-95803 19900411; JPX2-127242 19900516; JPX2-133397 19900523; JPX2-177727 19900705
- 主分类号: H01J3/02
- IPC分类号: H01J3/02 ; H01J9/02
摘要:
An electron emission device is employed as an electron emission source in various applications using an electron beam. The electron emission device has a cathode layer having an edge, and a control electrode spaced and electrically insulated from the cathode layer, for drawing electrons from said edge of the cathode layer. When a voltage is applied between the cathode layer and the control electrode, a developed electric field is concentrated on the edge of the cathode layer to cause the edge to emit electrons. The electron emission device can easily be manufactured with a high yield since it does not have a needle tip for emitting electrons. A method of manufacturing the electron emission device is also disclosed.
公开/授权文献
- US5639692A Non-etch back SOG process using a metal via stud 公开/授权日:1997-06-17