发明授权
- 专利标题： Capping layer preventing deleterious effects of As--P exchange
- 专利标题（中）： 封盖层防止As-P交换的有害影响
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申请号： US859120申请日： 1992-03-27
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公开(公告)号： US5246878A公开(公告)日： 1993-09-21
- 发明人: Rajaram Bhat , Maria J. S. P. Brasil , Robert E. Nahory , William E. Quinn , Maria C. Tamargo
- 申请人： Rajaram Bhat , Maria J. S. P. Brasil , Robert E. Nahory , William E. Quinn , Maria C. Tamargo
- 申请人地址： NJ Livingston
- 专利权人： Bell Communications Research, Inc.
- 当前专利权人： Bell Communications Research, Inc.
- 当前专利权人地址： NJ Livingston
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L29/205
摘要：
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As--P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.
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