发明授权
- 专利标题： Microelectronic superconducting device with multi-layer contact
- 专利标题（中）： 具有多层接触的微电子超导器件
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申请号： US586435申请日： 1990-09-21
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公开(公告)号： US5256636A公开(公告)日： 1993-10-26
- 发明人: Frederick C. Wellstood , John J. Kingston , John Clarke
- 申请人： Frederick C. Wellstood , John J. Kingston , John Clarke
- 申请人地址： CA Oakland
- 专利权人： The Regents of the University of Calif.
- 当前专利权人： The Regents of the University of Calif.
- 当前专利权人地址： CA Oakland
- 主分类号： H01L39/24
- IPC分类号： H01L39/24 ; H01L39/22 ; B05D5/12 ; H01B12/00
摘要：
A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.
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