发明授权
- 专利标题: Method of making a hetero-junction bipolar transistor
- 专利标题(中): 制造异质结双极晶体管的方法
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申请号: US20461申请日: 1993-02-22
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公开(公告)号: US5264379A公开(公告)日: 1993-11-23
- 发明人: Shinichi Shikata
- 申请人: Shinichi Shikata
- 申请人地址: JPX Osaka
- 专利权人: Sumitomo Electric Industries, Inc.
- 当前专利权人: Sumitomo Electric Industries, Inc.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX2-123895 19900514; JPX2-204530 19900801
- 主分类号: H01L21/314
- IPC分类号: H01L21/314 ; H01L21/318 ; H01L21/331 ; H01L23/29 ; H01L29/737 ; H01L21/265
摘要:
A method of manufacturing a heterojunction bipolar transistor is disclosed. On a base layer of a first semiconductor which contains at least one of gallium and arsenic as a constituent element, an emitter layer of a second semiconductor is formed which contains as a constituent element at least one of gallium and arsenic and which has a band gap larger that of the first semiconductor. Predetermined regions of the emitter layer and an upper portion of the base layer are removed to form a mesa structure. Then, a surface of a junction region of the base layer and the emitter layer of the formed mesa structure is treated using a phosphate etchant and a sulfur or sulfide passivating agent. After the surface treatment, the surface of the junction is covered with an insulating film.
公开/授权文献
- USD354961S Vehicle adapter for a portable radio/telephone 公开/授权日:1995-01-31