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公开(公告)号：US08349603B2
公开(公告)日：2013-01-08
申请号：US12902544
申请日：2010-10-12
IPC分类号： C12M1/34
CPC分类号： G01Q60/40
摘要： A cantilever for measuring intra-cellular and inter-cellular microspaces of the present invention includes a support portion, a lever portion provided to the support portion so as to protrude therefrom, and a probe portion provided near a free end of the lever portion. The probe portion includes a conductive probe made of a carbon-based material, and an insulating film to coat a periphery of the conductive probe.
摘要翻译： 用于测量本发明的细胞内和细胞内的微细胞的悬臂包括支撑部分，设置在支撑部分上以从其突出的杆部分和设置在杆部分的自由端附近的探针部分。 探针部分包括由碳基材料制成的导电探针和用于涂覆导电探针周围的绝缘膜。
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公开(公告)号：US20120302045A1
公开(公告)日：2012-11-29
申请号：US13515991
申请日：2010-12-15
IPC分类号： H01L21/20
CPC分类号： C30B29/04 , C23C14/0605 , C23C14/48 , C23C14/5873 , C23C16/274 , C30B25/105 , C30B25/186
摘要： The present invention discloses a method for producing a mosaic diamond comprising implanting ions in the vicinity of the surfaces of a plurality of single-crystal diamond substrates arranged in the form of a mosaic, or in the vicinity of the surfaces of mosaic single-crystal diamond substrates whose back surfaces are bonded by a single-crystal diamond layer, so as to form non-diamond layers; growing a single-crystal diamond layer by a vapor-phase synthesis method; and separating the single-crystal diamond layer above the non-diamond layers by etching the non-diamond layers. The method of the present invention prevents the destruction of single-crystal diamond substrates by using a process that is simpler than conventional methods, thus allowing a large quantity of mosaic diamond to be produced in a stable and efficient manner.
摘要翻译： 本发明公开了一种马赛克金刚石的制造方法，其特征在于，在离散镶嵌单体结构的多个单晶金刚石基板的表面附近，或马赛克单晶金刚石的表面附近， 其背面通过单晶金刚石层结合以形成非金刚石层的基板; 通过气相合成法生长单晶金刚石层; 以及通过蚀刻非金刚石层来分离非金刚石层上方的单晶金刚石层。 本发明的方法通过使用比常规方法简单的方法来防止单晶金刚石基板的破坏，因此允许以稳定和有效的方式生产大量的镶嵌金刚石。
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公开(公告)号：US20120132928A1
公开(公告)日：2012-05-31
申请号：US13386067
申请日：2010-07-21
CPC分类号： H01L21/043 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor diamond device, there is provided an ohmic electrode that is chemically, and thermally stable, and is excellent in respect of low contact resistance, and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni, and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy, or the nickel-chromium compound, it is improved in characteristics.
摘要翻译： 在半导体金刚石器件中，提供化学和热稳定的欧姆电极，并且在低接触电阻和高耐热性方面是优异的。 通过溅射法等在半导体金刚石上形成含有Ni的镍 - 铬合金或镍 - 铬化合物，以及化学和热稳定的Ni6Cr2或Ni72Cr18Si10等Cr，从而获得半导体 金刚石器件具有优良的欧姆电极。 在形成镍 - 铬合金或镍 - 铬化合物之后，如果进行热处理，则其特性得到改善。
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公开(公告)号：US5814918A
公开(公告)日：1998-09-29
申请号：US689296
申请日：1996-08-07
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer a ZnO layer and an SiO.sub.2 layer, which can be operated at the frequency of 2 GHz or higher, with superior durability and less energy loss. The SAW device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: (i) a diamond layer, (ii) a ZnO layer formed on the diamond layer, the ZnO layer having a thickness t.sub.z, (iii) an interdigital transducer (IDT) formed over the ZnO layer, and (iv) a SiO.sub.2 layer formed over the interdigital transducer onto the ZnO layer, the SiO.sub.2 layer having a thickness of t.sub.s ; wherein parameters kh.sub.z =(2.pi./.lambda.)t.sub.z and kh.sub.s =(2.pi./.lambda.)t.sub.s are given within a region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A in a two-dimensional Cartesian coordinate graph having abscissa axis of kh.sub.z and ordinate axis of kh.sub.s, the outer edge of the region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q and R and lines A-B, B-C, C-D, D-E, E-F, F-G, G-H, H-I, I-J, J-K, K-L, L-M, M-N, N-O, O-P, P-Q, Q-R and R-A, as shown in FIG. 1.
摘要翻译： 本发明涉及一种SAW器件，其包括金刚石层，ZnO层和SiO 2层，其可以以2GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。 根据本发明的波长λ（μm）的第二模式表面声波的SAW器件包括：（i）金刚石层，（ii）在金刚石层上形成的ZnO层，ZnO层具有厚度tz ，（iii）在ZnO层上形成的叉指式换能器（IDT），以及（iv）在叉状换能器上形成在ZnO层上的SiO 2层，SiO 2层的厚度为ts; 其中参数khz =（2π/λ）tz和khs =（2π/λ）ts在具有khz的纵轴和khs的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFGHIJKLMNOPQRA内给出， 区域ABCDEFGHIJKLMNOPQRA由笛卡尔坐标中的闭环提供，由点A，B，C，D，E，F，G，H，I，J，K，L，M，N，O，P，Q组成 以及R和线AB，BC，CD，DE，EF，FG，GH，HI，IJ，JK，KL，LM，MN，NO，OP，PQ，QR和RA。 1。
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5.发明授权
公开(公告)号：US5463901A
公开(公告)日：1995-11-07
申请号：US283251
申请日：1994-07-29
CPC分类号： H03H9/02574 , Y10T29/49005
摘要： A layer of boron nitride which is relatively easily workable is positioned in a stacked structure in close contact with a piezoelectric member, to provide a surface acoustic wave device which can be driven in a higher frequency range. Such a surface acoustic device (10) has a substrate (1), a boron nitride film (2) formed on the substrate (1), and a pair of interdigital electrodes (3a, 3b) formed on the boron nitride film (2). The interdigital electrodes (3a, 3b) are covered with a piezoelectric film (4), which is in close contact with the boron nitride film (2).
摘要翻译： 相对容易加工的氮化硼层位于与压电元件紧密接触的堆叠结构中，以提供能够在较高频率范围内驱动的声表面波器件。 这种表面声学装置（10）具有基板（1），形成在基板（1）上的氮化硼膜（2）和形成在氮化硼膜（2）上的一对叉指电极（3a，3b） 。 叉指电极（3a，3b）被与氮化硼膜（2）紧密接触的压电膜（4）覆盖。
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公开(公告)号：US5390401A
公开(公告)日：1995-02-21
申请号：US103729
申请日：1993-08-06
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/1092 , Y10T29/42
摘要： A surface acoustic wave device is so manufactured that it's reliability is increased and so that it is surface-mountable with no requirement for packaging. The surface acoustic wave device (20) has a pair of opposite interdigital electrodes (2a, 2b) and a piezoelectric member (4) in close contact with the interdigital electrodes (2a, 2b). A portion located between the pair of interdigital electrodes (2a, 2b) propagates surface acoustic waves. This device (20) is characterized by an air bridge (13) covering the portion of the piezoelectric member (4) for propagating surface acoustic waves and the pair of interdigital electrodes (2a, 2b). The air bridge (13), may be provided with an insulating film (14) which is not in contact with the piezoelectric member (4).
摘要翻译： 表面声波装置的制造使其可靠性增加，并且其表面可安装，而不需要包装。 表面声波装置（20）具有与叉指电极（2a，2b）紧密接触的一对相对的叉指电极（2a，2b）和压电元件（4）。 位于一对叉指电极（2a，2b）之间的部分传播表面声波。 该装置（20）的特征在于，覆盖压电部件（4）的部分以传播表面声波的空气桥（13）和一对叉指电极（2a，2b）。 空气桥（13）可以设置有不与压电构件（4）接触的绝缘膜（14）。
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公开(公告)号：US08735907B2
公开(公告)日：2014-05-27
申请号：US13386067
申请日：2010-07-21
CPC分类号： H01L21/043 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.
摘要翻译： 在半导体金刚石器件中，提供了化学和热稳定的欧姆电极，具有优异的低接触电阻和高耐热性。 通过溅射工艺等在半导体金刚石上形成含有Ni和Cr的镍铬合金或镍铬化合物，例如化学和热稳定的Ni6Cr2或Ni72Cr18Si10，从而获得半导体金刚石 器件具有优良的欧姆电极。 如果在形成镍铬合金或化合物之后进行热处理，则其性能得到改善。
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8.发明申请FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME 审中-公开带有磷酸盐的N型（100）面向单晶金刚石半导体的薄膜及其制造方法公开(公告)号：US20110175109A1
公开(公告)日：2011-07-21
申请号：US13074284
申请日：2011-03-29
IPC分类号： H01L29/16
CPC分类号： C30B25/105 , C30B25/02 , C30B25/18 , C30B25/20 , C30B29/04 , C30B29/40 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/30
摘要： There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.
摘要翻译： 提供了掺杂有磷原子的n型（100）取向的单晶金刚石半导体膜及其制造方法。 n型（100）取向单晶金刚石半导体膜，其特征在于（100）定向金刚石在这样的条件下外延生长在基板上; 金刚石基体是（100）取向的金刚石，用于化学气相沉积的方法在等离子气相中提供氢，烃和磷化合物，等离子体气相中的磷原子与碳原子的比例不小于0.1％ 碳原子数相对于氢原子的比例为0.05％以上，制造该氢原子的方法。
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公开(公告)号：US07960905B2
公开(公告)日：2011-06-14
申请号：US11994065
申请日：2006-06-21
IPC分类号： H01J1/00
摘要： The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.
摘要翻译： 本发明提供了可用于低电压可操作的冷阴极表面结构的稳定且优异的电子发射特性的金刚石电子源和用于制备金刚石电子源的方法。 具体地说，具有碳末端结构的金刚石电子源具有由电极和金刚石膜构成的结构，并且当施加电压时，从金刚石膜发射电子或电子束。 金刚石膜由具有碳末端结构的金刚石制成。 本文还提供了制备金刚石电子源的方法。
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公开(公告)号：US20100247884A1
公开(公告)日：2010-09-30
申请号：US12681145
申请日：2008-10-03
CPC分类号： C23C16/27 , C23C16/45523 , C30B25/105 , C30B29/04 , H01L21/02376 , H01L21/02444 , H01L21/02507 , H01L21/02527 , H01L21/0262 , H01L21/02634 , Y10T428/2495 , Y10T428/24975 , Y10T428/30
摘要： The present invention aims at providing a high performance device that is not restricted by the current concept of a super-lattice and can overcome or loosen limitations on physical properties of materials and various problems related to hetero junction, and achieves an isotope diamond layered body formed by layering of 12C diamond film and 13C diamond film by epitaxially growing the 12C diamond film and the 13C diamond film.
摘要翻译： 本发明的目的在于提供一种不受现有超晶格概念限制的高性能器件，可以克服或松开材料的物理性质和与异质结有关的各种问题的限制，并且实现了形成的同位素金刚石层状体 通过外延生长12C金刚石膜和13C金刚石膜来分层12C金刚石膜和13C金刚石膜。
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