发明授权
- 专利标题: Semiconductor integrated circuit device with power consumption reducing arrangement
- 专利标题(中): 半导体集成电路器件具有功耗降低的布置
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申请号: US832334申请日: 1992-02-07
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公开(公告)号: US5265060A公开(公告)日: 1993-11-23
- 发明人: Shuichi Miyaoka
- 申请人: Shuichi Miyaoka
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX58-243807 19831226
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/10 ; G11C11/413
摘要:
In semiconductor circuits, and particularly in memories, it is often desirable to use bipolar transistors for speed together with MOS elements. However, although the bipolar transistors are useful for speed considerations, they undesirably significantly increase the power consumption of the overall circuit. Accordingly, to reduce power consumption, a bipolar/MOSFET arrangement is provided wherein MOSFETs are used as current sources to supply operation currents to the bipolar transistors only during the periods of their operation. Thus, a semiconductor integrated circuit device is achieved featuring a high operation speed yet consuming reduced amounts of electric power. Additionally, power consumption can be further reduced by providing a time serial operation for actuation of the MOSFETs in different peripheral circuits for a memory array.
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