发明授权
US5270590A Sense circuit for storage devices such a non-volatile memories, with
enhanced sensing discrimination
失效
用于存储设备的感应电路,如非易失性存储器,具有增强的感测鉴别
- 专利标题: Sense circuit for storage devices such a non-volatile memories, with enhanced sensing discrimination
- 专利标题(中): 用于存储设备的感应电路,如非易失性存储器,具有增强的感测鉴别
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申请号: US806118申请日: 1991-12-12
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公开(公告)号: US5270590A公开(公告)日: 1993-12-14
- 发明人: Luigi Pascucci
- 申请人: Luigi Pascucci
- 申请人地址: ITX Milan
- 专利权人: SGS-Thomson Microelectronics, s.r.l.
- 当前专利权人: SGS-Thomson Microelectronics, s.r.l.
- 当前专利权人地址: ITX Milan
- 优先权: EPX90830583.2 19901213
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C7/14 ; G11C16/06 ; G11C16/28 ; G11C29/00 ; G11C29/56 ; H03F3/45 ; H03K5/22
摘要:
The sense circuit, for recognizing the virgin or programmed status of cells in storage devices, comprises a differential amplifier having a first input connected to a number of selectable matrix cells, through a first uncoupling circuit, a second input connected to a number of selectable reference virgin cells through a second uncoupling circuit, respective matrix and reference load transistors connected between each input of the amplifier and a supply voltage, and a current generator connected in parallel to the matrix cells and controlled by the first input of the amplifier to draw a current equal to a predetermined fraction of the current flowing through said first input.
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