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US5272098A Vertical and lateral insulated-gate, field-effect transistors, systems and methods 失效
垂直和横向绝缘栅，场效应晶体管，系统和方法

Vertical and lateral insulated-gate, field-effect transistors, systems and methods
摘要：
A field effect transistor (147) is formed in a region of a second semiconductor layer (171), having a first conductivity type. A tank region (196) of a second conductivity type opposite the first conductivity type is formed in the semiconductor region (171), and defines a tank area on the face of the semiconductor layer (171). A first highly doped region (276) formed to be of the first conductivity type is formed within the region (171) and to be spaced from the tank region (196). A gate insulator layer (218) is formed on at least one selected portion of the face, this selected portion including a portion of the tank area (196). A conductive gate (246) is formed on the gate insulator layer over the selected portion of the face. At least one second highly doped region (278) is formed at the face within the tank area to be of the first conductivity type, and to have at least one lateral edge self-aligned to a corresponding one of the lateral edges of the gate (246 ). The tank area forms a channel between the first highly doped region (276) and the second highly doped region (278).
摘要（中）：

场效应晶体管（147）形成在具有第一导电类型的第二半导体层（171）的区域中。 在半导体区域（171）中形成与第一导电类型相反的第二导电类型的槽区（196），并且限定半导体层（171）的表面上的槽区。 形成为第一导电类型的第一高掺杂区域（276）形成在区域（171）内并且与罐区域（196）间隔开。 栅极绝缘体层（218）形成在面的至少一个选定部分上，该选定部分包括罐区域（196）的一部分。 导电栅极（246）形成在栅极绝缘体层上面的所选择的部分上。 至少一个第二高度掺杂区域（278）形成在罐区域内的面上以具有第一导电类型，并且具有至少一个与栅极的相应一个边缘自对准的侧边缘（278） 246）。 罐区域在第一高度掺杂区域（276）和第二高度掺杂区域（278）之间形成通道。

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