发明授权
US5273586A Low pressure chemical vapor deposition apparatus, with removal system
for remaining ionized gas components
失效
低压化学气相沉积装置，具有用于剩余电离气体组分的去除系统
- 专利标题： Low pressure chemical vapor deposition apparatus, with removal system for remaining ionized gas components
- 专利标题（中）： 低压化学气相沉积装置，具有用于剩余电离气体组分的去除系统
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申请号： US772859申请日： 1991-10-08
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公开(公告)号： US5273586A公开(公告)日： 1993-12-28
- 发明人: Yun-Kee Kim , Chun-Soo Bann
- 申请人： Yun-Kee Kim , Chun-Soo Bann
- 申请人地址： KRX Kyounggi-do
- 专利权人： Samsung Electronics, Co., Ltd.
- 当前专利权人： Samsung Electronics, Co., Ltd.
- 当前专利权人地址： KRX Kyounggi-do
- 优先权： KRX91-2572 19910218
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; H01L21/205 ; H01L21/22 ; H01L21/31 ; H01L21/318 ; C23C16/56 ; C23C16/46
摘要：
A low pressure chemical vapor deposition apparatus is provided for removing particulate matter. The apparatus includes a bell jar, a quartz tube installed in the bell jar, a slotted quartz boat installed in the quartz tube and for holding wafers which are to be coated with film. The apparatus further includes a gas line for introducing a reactant gas into the chamber within the quartz tube, where the quartz boat is located, a gas inlet made of quartz, an MFC, a valve 10 a three-zone furnace for heating the quartz tube to a reaction temperature, a pump 4 for pumping out air and reactant gas from the chamber within the quartz tube, a door plate for placing the slotted quartz boat in the chamber a power source device for causing an electric current to charge contacts with a positive or negative bias which are provided on the door plate, and a main controller for operating the power source device.
公开/授权文献
- US4668651A Transition metal complex catalyzed processes 公开/授权日：1987-05-26
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