发明授权
US5276644A Sense circuit for storage devices such as non-volatile memories, with
compensated offset current
失效
用于存储设备（例如非易失性存储器）的检测电路，具有补偿偏移电流
- 专利标题： Sense circuit for storage devices such as non-volatile memories, with compensated offset current
- 专利标题（中）： 用于存储设备（例如非易失性存储器）的检测电路，具有补偿偏移电流
-
申请号： US791453申请日： 1991-11-13
-
公开(公告)号： US5276644A公开(公告)日： 1994-01-04
- 发明人: Luigi Pascucci , Marco Olivo
- 申请人： Luigi Pascucci , Marco Olivo
- 申请人地址： ITX Agrate Brianza
- 专利权人： SGS-Thomson Microelectronics, S.r.L.
- 当前专利权人： SGS-Thomson Microelectronics, S.r.L.
- 当前专利权人地址： ITX Agrate Brianza
- 优先权： ITX90830530.3 19901119
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C7/14 ; G11C16/06 ; G11C16/28 ; G11C7/00
摘要：
A non-volatile memory in which, during read operations, the sense amplifier's first input is connected not only to a selected non-programmed reference cell, but also to a current of a value one half the current that flows in a programmed cell; and the sense amplifier's second input is connected not only to a selected matrix cell to be read, but also to a current of a value one half the current that flows in a non-programmed cell.
公开/授权文献
- US4136075A Acrylic copolymer coatings 公开/授权日：1979-01-23
信息查询
