摘要:
In a nonvolatile memory comprising a data amplifying unit and an output element mutually connected by a connection line, the noise suppressing circuit comprises a network for generating a noise suppressing signal which is synchronized substantially perfectly with a signal controlling data loading from the amplifying unit to the output unit, presents a very short duration, equal to the switching time of the output unit, and freezes the amplifying unit during switching of the output unit to prevent this from altering the data stored in the amplifying unit or internal circuits of the memory. The same signal also blocks an address amplifying unit on the address bus.
摘要:
A power-on reset circuit, which may be utilized with CMOS integrated circuits, includes first and second series-connected inverters, wherein the output of the second inverter provides a reset signal. A series of switches and a biasing line having two series-connected diodes are integrally arranged with the inverters. Capacitive coupling to ground and the supply voltage is employed to prevent any static current path between supply voltage rails. The circuit provides a short duration reset signal which follows the supply voltage and is insensitive both to rebound signals on the supply voltage rails and to internal and external noise.
摘要:
The regulation of the output voltage of a voltage multiplier driven by a ring oscillator, an inverter of which is substituted by a NOR gate for providing a terminal through which stopping the oscillation, is effected by controlling the oscillation frequency in function of the current delivered by the voltage multiplier by means of a transistor T1 working as a current generator connected in series with a regulating chain of series-connected diodes by biasing the gate of the transistor with a constant voltage Vref, thus imposing a reference current Iref through the transistor. The voltage signal across the transistor is fed to the input of a first inverter with a preset triggering threshold and the output signal of the inverter is fed through an amplifying and phase-regenerating stage to said terminal for stopping the oscillation of said NOR gate of the ring oscillator. When the discharge current through the regulating chain becomes greater than the imposed current Iref, across the transistor T1 a voltage signal develops which, beyond a certain threshold, determines the switching of the inverter and, through the amplifying and phase-regenerating stage, causes a stop of the oscillation which resumes only when conduction through the regulating chain stops. At steady state the oscillation frequency will result controlled so as to maintain constant the output voltage of the voltage multiplier and to limit the discharge current through the regulating chain thus limiting power consumption.
摘要:
A circuit comprises a section generating a pulse signal for asynchronously enabling the read phases; a section generating precharge and detecting signals of adjustable duration, for controlling data reading from the memory and data supply to the output buffers; a section generating a noise suppressing signal for freezing the data in the output buffers during loading into the output circuits, and the duration of which is exactly equal to the propagation time of the data to the output circuits of the memory, as determined by propagating a data simulating signal in an output simulation circuit; a section generating a loading signal, the duration of which may be equal to that of the noise suppressing signal or extended by an extension circuit in the event the array presents slower elements which may thus be read; and a section generating a circuit reset signal.
摘要:
The discriminating sensitivity of a sense amplifier and the speed of the circuit are increased by exploiting the difference of potential which develops across the output nodes of the two control circuits, employed for enabling/disabling current paths of the input network of the differential amplifier, as a virtual additional signal for the sensing differential amplifier, by employing said output potentials of the two control circuits as virtual reference potentials for the pair of input transistors of the differential amplifier during a discriminating phase of the reading cycle. Two pass-transistors driven by a control signal provide to force to ground potential the output nodes of said control circuits, thus reestablishing a correct ground reference potential of the amplifier, during the final phase of amplification and storage of the extracted datum in an output latch, as well as during the successive standby period. Alternative embodiments also include various anti-overshoot circuits.
摘要:
A sense circuit for reading EPROM and ROM type memory cells employs a circuit for generating an offsetting current which is exempt of error during transients and which thus permits to achieve a reduced access time. On the other hand, the sense circuit maintains the intrinsic advantages of a current-offset sensing architecture which is represented by a substantially unlimited operating voltage range toward the maximum value VCC.sub.max. The current generating circuit is driven by means of a supplementary row of cells which is decoded at every reading and which replicates, during transients, the behaviour of the row selected for the reading.
摘要:
A load timing circuit including an output simulation circuit similar to the output circuits of the memory, so as to present the same propagation delay; a simulating signal source for generating a data simulating signal; a synchronizing network for detecting a predetermined switching edge of the data simulating signal and enabling supply of the signal to the output simulation circuit and data supply to the output circuits of the memory; a combinatorial network for detecting propagation of the data simulating signal to the output of the output simulation circuit and disabling the data simulating signal; and a reset element for resetting the timing circuit.
摘要:
There is described a semiconductor memory including a matrix of rows and columns of memory cells, wherein the columns are grouped together in sectors, each sector representing the portion of the matrix itself related to a data input/output line. Each sector is in turn divided into packets of columns, and there are redundancy columns suitable for replacing a matrix column containing defective memory cells. Each of the redundancy columns is included in a respective packet. The memory also includes control circuits to execute the abovementioned replacement.
摘要:
Spurious memory readings which may be caused by noise induced by transitions in the output buffers of a fast parallel memory device are prevented by permitting output latches to change state in function of newly extracted data signals by means of an enabling pulse having a preestablished duration and which is generated only after a change of memory address signals has occurred and the new configuration of memory address signals has lasted for a time which is not shorter than the time of propagation of signals through the memory chain. The enabling pulse is generated by employing a detector of transitions occurring in the input circuitry of the memory, a dummy memory chain, a one-shot pulse generator and a resetting pulse generator. The anti-noise network may be exploited also for implementing an auto-stand-by condition at the end of each read cycle, which reduces power consumption and increases speed by simplifying the sensing process.
摘要:
Spurious memory readings which may be caused by noise induced by transitions in the output buffers of a fast parallel memory device are prevented by permitting output latches to change state in function of newly extracted data signals by means of an enabling pulse having a preestablished duration and which is generated only after a change of memory address signals has occurred and the new configuration of memory address signals has lasted for a time which is not shorter than the time of propagation of signals through the memory chain. The enabling pulse is generated by employing a detector of transitions occurring in the input circuitry of the memory, a dummy memory chain, a one-shot pulse generator and a resetting pulse generator. The anti-noise network may be exploited also for implementing an auto-stand-by condition at the end of each read cycle, which reduces power consumption and increases speed by simplifying the sensing process.