发明授权
US5283204A Method of forming passivation oxidation for improving cell leakage and
cell area
失效
形成钝化氧化以改善细胞泄漏和细胞面积的方法
- 专利标题： Method of forming passivation oxidation for improving cell leakage and cell area
- 专利标题（中）： 形成钝化氧化以改善细胞泄漏和细胞面积的方法
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申请号： US869571申请日： 1992-04-15
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公开(公告)号： US5283204A公开(公告)日： 1994-02-01
- 发明人: Howard E. Rhodes , Tyler A. Lowrey
- 申请人： Howard E. Rhodes , Tyler A. Lowrey
- 申请人地址： ID Boise
- 专利权人： Micron Semiconductor, Inc.
- 当前专利权人： Micron Semiconductor, Inc.
- 当前专利权人地址： ID Boise
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L21/76
摘要：
The invention is directed to maximizing storage cell surface area in a high density/high volume DRAM (dynamic random access memory) fabrication process. Fabrication methods are disclosed that, when used with existing capacitor fabrication processes, will reduce cell leakage and allow for increased capacitance. The present invention corrects any severed storage node poly that may have resulted from a misalignment of a masking pattern used for defining future buried contacts by placing passivation oxidation over the existing wafer surface which, in effect, seals off the severed storage node poly form the capacitor's top cell plate poly. The passivation oxidation prevents cell plate to plate leakage while protecting the severed storage node poly from subsequent deposition of conductive layers.
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