发明授权
- 专利标题： Fast capacitive-load driving circuit particularly memories
- 专利标题（中）： 快速电容负载驱动电路特别是记忆
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申请号： US811323申请日： 1991-12-20
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公开(公告)号： US5283478A公开(公告)日： 1994-02-01
- 发明人: Franco Maloberti , Salvatore Portaluri , Guido Torelli
- 申请人： Franco Maloberti , Salvatore Portaluri , Guido Torelli
- 申请人地址： ITX Agrate Brianza
- 专利权人： SGS-Thomson Microelectronics, S.r.l.
- 当前专利权人： SGS-Thomson Microelectronics, S.r.l.
- 当前专利权人地址： ITX Agrate Brianza
- 优先权： ITX22569A/90 19901228
- 主分类号： G11C11/417
- IPC分类号： G11C11/417 ; G11C11/409 ; H03K17/16 ; H03K17/687 ; H03K19/003 ; H03K19/0175 ; H03K3/01 ; H03K5/12
摘要：
A fast capacitive-load driving circuit for driving output nodes on an integrated circuit. This circuit reduces noise interference caused by parasitic inductance by lowering the inductance voltage on the power supply lines during the switching process. This invention includes a voltage ramp, a voltage-to-current converter, and an output buffer having at least one pull-down transistor. A further embodiment includes an output buffer possessing a pull-down and a pull-up transistor.
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