A semiconductor device comprises a plurality of gate electrodes, drain electrodes, and source electrodes axi-symmetrically formed on opposite sides of a gate pad and drain pad. Two source pads are arranged at ends of these electrodes, to which the source electrodes are connected, so that a gate width can be shortened. Therefore, an output power, gain, etc., can be increased, and the high-frequency characteristics can be improved. Further, when arranging a plurality of semiconductor devices in parallel, the semiconductor chip can be formed in the shape of a square, i.e., the aspect ratio thereof can be reduced, and therefore, cracks in the semiconductor chip (semiconductor device) can be avoided.