A method for growing a silicon carbide single crystal on a seed crystal using a molecular beam source in vacuo by means of a molecular beam epitaxy, wherein a material in the molecular beam source is silicon carbide. A silicon molecular beam source and/or an impurity molecular beam source for doping may be further used. Temperatures of the silicon carbide molecular beam source, the silicon molecular beam source, the impurity molecular beam source and the seed crystal are independently controlled. Vapor compositions are controlled by the silicon carbide molecular beam source, the silicon molecular beam source and the impurity molecular beam source.