发明授权
- 专利标题: Surface emission type semiconductor laser
- 专利标题(中): 表面发射型半导体激光器
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申请号: US13024申请日: 1993-02-02
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公开(公告)号: US5295148A公开(公告)日: 1994-03-15
- 发明人: Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
- 申请人: Katsumi Mori , Tatsuya Asaka , Hideaki Iwano , Takayuki Kondo
- 申请人地址: JPX Tokyo
- 专利权人: Seiko Epson Corporation
- 当前专利权人: Seiko Epson Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX2-242000 19900912
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01S5/183 ; H01S5/42 ; H01S3/19
摘要:
A surface emission type semiconductor laser includes a plurality of semiconductor layers defining at least one resonator in a direction perpendicular to the semiconductor substrate of the laser, the layers including at least a cladding layer in the semiconductor layers being formed into at least one column-like portion extending in a direction perpendicular to the semiconductor substrate, and a II-VI group compound semiconductor epitaxial layer buried around the column-like portion. The column-like portion is of rectangular cross-section in a plane parallel to the semiconductor substrate and having longer and shorter sides, whereby the polarization plane of said emitted laser beam is parallel to the direction of said shorter sides.
公开/授权文献
- US6027081A Article holder 公开/授权日:2000-02-22
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