发明授权
- 专利标题: Strained interband resonant tunneling negative resistance diode
- 专利标题(中): 应变的带间谐振隧穿负电阻二极管
-
申请号: US923397申请日: 1992-07-31
-
公开(公告)号: US5296721A公开(公告)日: 1994-03-22
- 发明人: Joel N. Schulman , David H. Chow
- 申请人: Joel N. Schulman , David H. Chow
- 申请人地址: CA Los Angeles
- 专利权人: Hughes Aircraft Company
- 当前专利权人: Hughes Aircraft Company
- 当前专利权人地址: CA Los Angeles
- 主分类号: H01L29/12
- IPC分类号: H01L29/12 ; H01L29/88 ; H01L29/205 ; H01L29/72
摘要:
A double barrier tunnel diode (10) has a quantum well (12), a pair of electron injection layers (16) on either side of the quantum well (12), and a barrier layer (14) between each of the electron injection layers (16) and the quantum well (12), in a strained biaxial epitaxial relationship with the quantum well (12). The material of the quantum well (12) is chosen such that the biaxial strain is sufficient to reduce the energy of heavy holes in the quantum well (12) to less than the energy of the conduction band minimum energy of the electron injection layers (16). Preferably the quantum well (12) is made of gallium antimonide with from about 1 to about 40 atomic percent arsenic alloyed therein, the electron injection layers (16) are made of indium arsenide, and the barrier layers (14) are made of aluminum antimonide.