发明授权
US5299161A Method and device for improving performance of a parallel write test of
a semiconductor memory device
失效
一种用于提高半导体存储器件的并行写入测试性能的方法和装置
- 专利标题: Method and device for improving performance of a parallel write test of a semiconductor memory device
- 专利标题(中): 一种用于提高半导体存储器件的并行写入测试性能的方法和装置
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申请号: US794631申请日: 1991-11-18
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公开(公告)号: US5299161A公开(公告)日: 1994-03-29
- 发明人: Hoon Choi , Dong-Il Shu
- 申请人: Hoon Choi , Dong-Il Shu
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX20103/1989 19891229
- 主分类号: G06F11/20
- IPC分类号: G06F11/20 ; G11C11/401 ; G11C11/407 ; G11C29/00 ; G11C29/24 ; G11C29/34 ; G11C7/00 ; G06F11/00
摘要:
A semiconductor memory device having normal columns and redundant columns includes normal column decoders for designating the normal columns and redundant column decoders for designating the redundant columns so that the bits from the normal columns are combined with the bits from the redundant columns so as to provide an entire byte. The normal column decoders are to be operated simultaneously with the redundant column decoders.
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