发明授权
US5304461A Process for the selective deposition of thin diamond film by gas phase
synthesis
失效
通过气相合成选择性沉积薄金刚石膜的工艺
- 专利标题： Process for the selective deposition of thin diamond film by gas phase synthesis
- 专利标题（中）： 通过气相合成选择性沉积薄金刚石膜的工艺
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申请号： US845790申请日： 1992-03-09
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公开(公告)号： US5304461A公开(公告)日： 1994-04-19
- 发明人: Takayoshi Inoue , Hiroyuki Tachibana , Akimitsu Nakaue , Kazuo Kumagai , Koichi Miyata , Koji Kobashi
- 申请人： Takayoshi Inoue , Hiroyuki Tachibana , Akimitsu Nakaue , Kazuo Kumagai , Koichi Miyata , Koji Kobashi
- 申请人地址： JPX Kobe
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho
- 当前专利权人地址： JPX Kobe
- 优先权： JPX1-4092 19890110; JPX1-322259 19891211
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C23C16/27 ; G03F7/00 ; H01L21/20 ; H01L21/314 ; G03C5/00
摘要：
Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a substrate by gas phase synthesis. Where a silicon substrate is used, its surface is first abraded to give a surface roughness suitable for gas phase synthesis of diamond. When a basal thin diamond film is used, a coating material capable of withstanding a temperature higher than a substrate temperature required for gas phase synthesis of diamond and having a high etching selectivity to diamond is needed to cover areas other than where the thin diamond film is to be newly formed. When a lift-off method is used, a thin masking film having a melting point higher than a temperature to be employed for gas phase synthesis of diamond can also be used in place of the coating material described above.