公开(公告)号：US5304461A

公开(公告)日：1994-04-19

申请号：US845790

申请日：1992-03-09

申请人： Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue ,  Kazuo Kumagai ,  Koichi Miyata ,  Koji Kobashi

发明人： Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue ,  Kazuo Kumagai ,  Koichi Miyata ,  Koji Kobashi

IPC分类号： C23C16/04 ,  C23C16/27 ,  G03F7/00 ,  H01L21/20 ,  H01L21/314 ,  G03C5/00

CPC分类号： H01L21/3146 ,  C23C16/04 ,  C23C16/042 ,  C23C16/274 ,  G03F7/00 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02444 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642

摘要： Thin diamond films can be selectively deposited imagewise on a substrate by gas phase synthesis. The substrate may be either a silicon substrate or a basal thin diamond film formed beforehand on a substrate by gas phase synthesis. Where a silicon substrate is used, its surface is first abraded to give a surface roughness suitable for gas phase synthesis of diamond. When a basal thin diamond film is used, a coating material capable of withstanding a temperature higher than a substrate temperature required for gas phase synthesis of diamond and having a high etching selectivity to diamond is needed to cover areas other than where the thin diamond film is to be newly formed. When a lift-off method is used, a thin masking film having a melting point higher than a temperature to be employed for gas phase synthesis of diamond can also be used in place of the coating material described above.

摘要翻译： 薄金刚石膜可以通过气相合成成像地选择性地沉积在衬底上。 衬底可以是通过气相合成在衬底上预先形成的硅衬底或基底薄金刚石膜。 在使用硅衬底的情况下，首先对其表面进行研磨，得到适合气相合成金刚石的表面粗糙度。 当使用基底薄金刚石膜时，需要能够承受高于气相合成金刚石所需的衬底温度并且对金刚石具有高蚀刻选择性的涂层材料，以覆盖除了金刚石薄膜之外的区域 新成立。 当使用剥离方法时，也可以使用熔点高于用于气相合成金刚石的温度的薄掩模膜来代替上述涂层材料。

公开(公告)号：US5066938A

公开(公告)日：1991-11-19

申请号：US596068

申请日：1990-10-11

申请人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue

发明人： Koji Kobashi ,  Koichi Miyata ,  Kazuo Kumagai ,  Takayoshi Inoue ,  Hiroyuki Tachibana ,  Akimitsu Nakaue

IPC分类号： G01K7/22 ,  H01C7/04 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01C7/041 ,  G01K7/223 ,  H01L2224/48463

摘要： A diamond thin film thermistor having a substrate, an electrically insulating diamond layer formed on the substrate by vapor-phase synthesis, a semiconducting diamond layer as a temperature-sensing part on the electrically insulating diamond layer by vapor-phase synthesis, and metal thin film electrodes attached to the semiconducting diamond layer. A plurality of such diamond thin film thermistors can simultaneously be formed on a single substrate, and the substrate is cut with a dicing saw to provide individual diamond thin film thermistor chips of the same quality.

摘要翻译： 一种金刚石薄膜热敏电阻，其具有基板，通过气相合成在基板上形成的电绝缘金刚石层，通过气相合成在电绝缘金刚石层上的作为感温部分的半导体金刚石层，以及金属薄膜 连接到半导体金刚石层的电极。 多个这样的金刚石薄膜热敏电阻可以同时形成在单个基板上，并且用切割锯切割基板以提供相同质量的单独的金刚石薄膜热敏电阻芯片。

公开(公告)号：US5086014A

公开(公告)日：1992-02-04

申请号：US584110

申请日：1990-09-18

申请人： Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi ,  Yuichi Matsui ,  Akimitsu Nakaue

发明人： Koichi Miyata ,  Kazuo Kumagai ,  Koji Kobashi ,  Yuichi Matsui ,  Akimitsu Nakaue

IPC分类号： H01L21/205 ,  H01L21/04 ,  H01L21/20 ,  H01L21/285 ,  H01L29/16 ,  H01L29/45 ,  H01L29/47 ,  H01L29/862 ,  H01L29/872

CPC分类号： H01L29/872 ,  H01L21/02381 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28537 ,  H01L29/1602 ,  H01L29/45 ,  H01L29/6603 ,  H01L29/862 ,  Y10S148/14

摘要： A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH.sub.4, H.sub.2 and B.sub.2 H.sub.6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.

摘要翻译： 使用金刚石膜的肖特基二极管制造方法包括通过使用由CH 4，H 2和B 2 H 6组成的源气体的CVD在低电阻p型Si衬底上形成B掺杂的p型多晶金刚石膜，在其上形成欧姆接触 并且在B掺杂的p型多晶金刚石膜上形成Al，Pt Au，Ti或W的金属电极。 源气体的B / C浓度比大于0.01ppm且小于20ppm。

公开(公告)号：US4874939A

公开(公告)日：1989-10-17

申请号：US101170

申请日：1987-09-25

申请人： Yoshiro Nishimoto ,  Yasuji Yoneda ,  Shinichi Imaoka ,  Yasuhide Nakai ,  Akimitsu Nakaue ,  Yoshihiko Onishi ,  Hiroyuki Tachibana ,  Takayoshi Inoue ,  Takuya Kusaka ,  Hiroyuki Takamatsu ,  Shigeki Tojyo ,  Hiroshi Kajikawa ,  Kozo Nishimura

发明人： Yoshiro Nishimoto ,  Yasuji Yoneda ,  Shinichi Imaoka ,  Yasuhide Nakai ,  Akimitsu Nakaue ,  Yoshihiko Onishi ,  Hiroyuki Tachibana ,  Takayoshi Inoue ,  Takuya Kusaka ,  Hiroyuki Takamatsu ,  Shigeki Tojyo ,  Hiroshi Kajikawa ,  Kozo Nishimura

IPC分类号： G01B11/00 ,  G01J1/02 ,  G01M11/00 ,  G01N21/88 ,  H01L27/14 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/16

CPC分类号： H01L31/02164 ,  H01L31/02024

摘要： An apparatus for detecting position/variance of input light is disclosed which includes a photoelectric conversion device receiving input light constituted of a first resistive layer formed of a first photoelectric conversion material and a second resistive layer formed of a second photoelectric conversion material connected with the first resistive layer through a depletion layer or directly, wherein the first resistive layer is provided with uniform resistivity throughout its surface so that a linear output proportional to the average of the distances between one end of the photoelectric conversion device and positions of the input light is detected and the second resistive layer is provided with resistivity dependent upon the distance from its one end so that a quandratic ouput proportional to the average of the squares of the distances between one end of the photoelectric conversion device and positions of the input light is detected.

摘要翻译： 公开了一种用于检测输入光的位置/方差的装置，其包括：光电转换装置，其接收由第一光电转换材料形成的第一电阻层和由与第一光电转换材料连接的第二光电转换材料形成的第二电阻层构成的输入光; 电阻层通过耗尽层或直接地，其中第一电阻层在整个表面上具有均匀的电阻率，使得与光电转换装置的一端之间的距离的平均值与输入光的位置的平均值成比例的线性输出被检测到 并且第二电阻层具有取决于其一端的距离的电阻率，使得与光电转换装置的一端之间的距离的平方的平均值和输入光的位置的平均值成正比的quandratic输出。