发明授权
US5304830A Semiconductor integrated circuit device for BI-CMOS configuration free
from noises on power voltage lines
失效
用于BI-CMOS配置的半导体集成电路器件在电源电压线上无噪声
- 专利标题： Semiconductor integrated circuit device for BI-CMOS configuration free from noises on power voltage lines
- 专利标题（中）： 用于BI-CMOS配置的半导体集成电路器件在电源电压线上无噪声
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申请号： US22133申请日： 1993-02-25
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公开(公告)号： US5304830A公开(公告)日： 1994-04-19
- 发明人: Masaharu Sato
- 申请人： Masaharu Sato
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-041477 19920227
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L27/06 ; H01L27/092 ; H01L29/76 ; H01L29/00 ; H01L29/94
摘要：
A semiconductor integrated circuit device is fabricated from a complementary inverter circuit and an emitter coupled logic circuit, and an n-type well assigned to a p-channel type transistor extends beneath a p-type well assigned to an n-channel type transistor for partially overlapping therewith, thereby increasing capacitance across the p-n junction for eliminating noises from power voltages.
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