发明授权
- 专利标题： Lateral double diffused insulated gate field effect transistor fabrication process
- 专利标题（中）： 横向双扩散绝缘栅场效应晶体管制造工艺
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申请号： US815732申请日： 1991-12-30
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公开(公告)号： US5306652A公开(公告)日： 1994-04-26
- 发明人: Oh-Kyong Kwon , Taylor R. Efland , Satwinder Malhi , Wai T. Ng
- 申请人： Oh-Kyong Kwon , Taylor R. Efland , Satwinder Malhi , Wai T. Ng
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L29/08
- IPC分类号： H01L29/08 ; H01L29/78 ; H01L21/336
摘要：
A transistor (10) has a thin epitaxial layer (14) of a second conductivity type on a semiconductor substrate (12) of a first conductivity type. A drift region (24) of the second conductivity type is formed extending through the thin epitaxial layer (14) to the substrate (12) . A thick insulator layer (26) is formed on the drift region (24). An IGFET body (28) of the first conductivity type is formed adjacent the drift region (24). A source region (34) of the second conductivity type is formed within the IGFET body (28) and spaced from the drift region (24) defining a channel region (40) within the IGFET body (28). A conductive gate (32) is insulatively disposed over the IGFET body (28) and extends from the source region (34) to the thick insulator layer (26). A drain region (36) is formed adjacent the drift region (24).
公开/授权文献
- US5783326A Nonaqueous electrolyte secondary battery 公开/授权日：1998-07-21
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