发明授权
- 专利标题: Method of inspecting thin film transistor liquid crystal substrate and apparatus therefor
- 专利标题(中): 检查薄膜晶体管液晶基板的方法及其装置
-
申请号: US921583申请日: 1992-07-30
-
公开(公告)号: US5309108A公开(公告)日: 1994-05-03
- 发明人: Shunji Maeda , Hitoshi Kubota , Makoto Ono
- 申请人: Shunji Maeda , Hitoshi Kubota , Makoto Ono
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-189994 19910730; JPX3-287560 19911101; JPX4-045627 19920303
- 主分类号: G06T7/00
- IPC分类号: G06T7/00 ; G09G3/00 ; G01R31/02 ; G06K9/00
摘要:
The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respectively, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of applying voltage between the scan lines and the signal lines, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of stopping the voltage application, and the scan lines and the signal lines relating to variation of the heating state are detected from difference or quotient between an infrared image at the voltage applying state and an infrared image at the stopping state of voltage application, thereby a pixel address with a shortcircuit defect occurring is specified. If an image part being equal to the set threshold value or more does not exist in the difference infrared image in the pixel address, a wiring pattern position in the pixel address is detected from a visible image of the pixel address, and this wiring pattern and one from a neighboring pixel address are compared to detect a short circuit defect which can be removed by laser.
公开/授权文献
- US4257881A Process for beneficiating oxide ores 公开/授权日:1981-03-24
信息查询