摘要:
The invention relates to a method of inspecting and correcting a thin film transistor liquid crystal substrate and an apparatus therefor, where a plurality of scan lines and signal lines are connected electrically in common at each one terminal side respectively, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of applying voltage between the scan lines and the signal lines, and an infrared image outside the pixel domain is detected after lapse of a prescribed time from the time point of stopping the voltage application, and the scan lines and the signal lines relating to variation of the heating state are detected from difference or quotient between an infrared image at the voltage applying state and an infrared image at the stopping state of voltage application, thereby a pixel address with a shortcircuit defect occurring is specified. If an image part being equal to the set threshold value or more does not exist in the difference infrared image in the pixel address, a wiring pattern position in the pixel address is detected from a visible image of the pixel address, and this wiring pattern and one from a neighboring pixel address are compared to detect a short circuit defect which can be removed by laser.
摘要:
A pattern detection method and apparatus for inspecting, with high resolution, a micro fine defect of a pattern on an inspected object, and a semiconductor substrate manufacturing method and system with a high yield. A micro fine pattern on the inspected object is inspected by annular-looped illumination through an objective lens onto a wafer, the wafer having micro fine patterns thereon. The illumination may be polarized and controlled according to an image detected on the pupil of the objective lens, and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect. Simultaneously, micro fine defects on the micro-fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect.
摘要:
A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
摘要:
Method of and apparatus for checking the geometry of multi-layer patterns for IC structures having identical functions, each of the multi-layer patterns including layer patterns arranged in different level layers, wherein electrical image signals corresponding to any two of the multi-layer patterns and having more than two levels are registered with each other and then compared to determine unmatched and matched portions. The comparison of the registered electric image signals may be performed with respect to their amplitude or their gradients. The registration and comparison of two electric image signals may be repeated for all of the layer patterns with the matched portions being no longer subjected to the registration and comparison. A defect detection signal is produced from finally unmatched portions, if any, of the electric image signals having undergone the said registration and comparison.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined changed state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
The present invention relates to a high-sensitivity inspection method and apparatus adapted for the fine-structuring of patterns, wherein defect inspection sensitivity is improved using the following technologies: detection optical system is improved in resolution by filling the clearance between an objective lens 30 and a sample 1, with a liquid, and increasing effective NA (Numerical Aperture); and when a transparent interlayer-insulating film is formed on the surface of the sample, amplitude splitting at the interface between the liquid and the insulating film is suppressed for reduction in the unevenness of optical images in brightness due to interference of thin-film, by immersing the clearance between the objective lens and the sample, with a liquid of a refractive index close to that of the transparent film.
摘要:
A method of inspecting a specimen, including: emitting a light from a lamp of a light source; illuminating a specimen on which plural patterns are formed with the light emitted from the light source and, passed through an objective lens; forming an optical image of the specimen by collecting light reflected from the specimen by the illuminating and passed through the objective lens and a image forming lens; detecting the optical image with a TDI image sensor; and processing a signal outputted from the TDI image sensor and detecting a defect of a pattern among the plural patterns formed on the specimen, wherein the image detected by the TDI image sensor is formed with light having a wavelength selected from the wavelengths of the light emitted from the light source.
摘要:
A circuit pattern inspection method and an apparatus therefor, in which the whole of a portion to be inspected of a sample to be inspected is made to be in a predetermined charged state, the portion to be inspected is irradiated with an image-forming high-density electron beam while scanning the electron beam, secondary charged particles are detected at a portion irradiated with the electron beam after a predetermined period of time from an instance when the electron beam is irradiated, an image is formed on the basis of the thus detected secondary charged particle signal, and the portion to be inspected is inspected by using the thus formed image.
摘要:
A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
摘要:
A pattern checking method wherein an image of a certain position of one pattern is detected; the detected image is positioned with respect to an image of a position corresponding to the certain position, in a reference pattern image; and the positioned images are compared with each other, whereby a discrepant place among these positioned images is judged as a defect the positioning operations of the images of the detected patterns are controlled based upon either pattern information such as density of the images of the detected patterns, or information obtained from the positioning operations for images of other positions in the patterns. An image sensor unit for detecting images of patterns is constructed which has such a structure that a plurality of one-dimensional image sensors functioning as a pattern detector are arranged in a two-dimensional form, and an output of a certain one-dimensional image sensor for imaging a certain position of one pattern is delayed for a predetermined time period, and also both of an output of an one-dimensional image sensor adjoining the first-mentioned one-dimensional image sensor, which images the same position of the same pattern, and the delayed output of the certain one-dimensional image sensor are sequentially added to derive a summation output. The image sensor unit is inclined at a predetermined angle with respect to a plane perpendicular to the reflection light from the patterns, and the reflection light from the patterns is focused via a confocal focusing optical system onto this image sensor unit.