发明授权
- 专利标题: Anti-guided phase-locked array and manufacturing method therefor
- 专利标题(中): 反引导锁相阵列及其制造方法
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申请号: US953359申请日: 1992-09-30
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公开(公告)号: US5323405A公开(公告)日: 1994-06-21
- 发明人: Satoshi Kamiyama , Kiyoshi Ohnaka
- 申请人: Satoshi Kamiyama , Kiyoshi Ohnaka
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX3-255168 19911002
- 主分类号: H01L27/15
- IPC分类号: H01L27/15 ; H01S5/00 ; H01S5/042 ; H01S5/20 ; H01S5/40 ; H01S3/082 ; H01S3/098 ; H01S3/25
摘要:
A phase-locked laser array comprising a plurality of element regions for passing electric current into an active layer; and inter-element regions formed between the element regions. Each of the inter-element regions is so formed as to have two regions, i.e. a non-diffusion region at the center thereof and a diffusion regions disposed on both sides thereof, thereby rendering the refractive index in the non-diffusion region higher than that in the diffusion regions. The method of manufacturing the phase-locked laser array which is characterized by including a step growing an optical waveguide layer of superlattice on a portion of a second clad layer while diffusing impurities doped in the second clad layer into said optical waveguide layer, thereby forming a diffusion regions on both sides of the inter-element region.
公开/授权文献
- US5989606A Berry pack 公开/授权日:1999-11-23
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