发明授权
- 专利标题： Formation of semiconductor diamond
- 专利标题（中）： 形成半导体金刚石
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申请号： US918961申请日： 1992-07-24
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公开(公告)号： US5328855A公开(公告)日： 1994-07-12
- 发明人: Makoto Kitabatake , Masahiro Deguchi , Takashi Hirao
- 申请人： Makoto Kitabatake , Masahiro Deguchi , Takashi Hirao
- 申请人地址： JPX Kadoma
- 专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人： Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址： JPX Kadoma
- 优先权： JPX3-186079 19910725; JPX4-014614 19920130; JPX4-014615 19920130; JPX4-026483 19920213
- 主分类号： H01L21/04
- IPC分类号： H01L21/04 ; H01L21/265 ; H01L21/268
摘要：
Semiconductor diamond is formed by a process comprising irradiating diamond crystal with light having irradiation density of more than 0.1 W/cm.sup.2, annihilating defects in the diamond crystals, and cleaning the surface of the diamond crystals.
公开/授权文献
- US6126557A Golf club shafts and methods of manufacturing the same 公开/授权日：2000-10-03
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