Invention Grant
- Patent Title: Plasma treatment apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US849738Application Date: 1992-03-11
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Publication No.: US5330578APublication Date: 1994-07-19
- Inventor: Mitsunori Sakama , Takeshi Fukada , Mitsuhiro Ichijo , Hisashi Abe
- Applicant: Mitsunori Sakama , Takeshi Fukada , Mitsuhiro Ichijo , Hisashi Abe
- Applicant Address: JPX Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JPX Kanagawa-ken
- Priority: JPX3-072470 19910312; JPX3-333922 19911122; JPX3-333923 19911122; JPX3-333925 19911122
- Main IPC: C23C16/458
- IPC: C23C16/458 ; C23C16/509 ; H01J37/32 ; C23C16/50 ; C23C16/54
Abstract:
A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.
Public/Granted literature
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