Invention Grant
US5330585A Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell 失效
砷化镓/砷化铝镓光电池包括环境密封的欧姆接触网格界面和制造电池的方法

Gallium arsenide/aluminum gallium arsenide photocell including
environmentally sealed ohmic contact grid interface and method of
fabricating the cell
Abstract:
A photocell (40) includes a photovoltaic or otherwise photosensitive layer structure (44) on which a passivation or window layer (52) of an environmentally sensitive material such as aluminum gallium arsenide (AlGaAs) and an antireflection (AR) coating (54) are formed. An electrically conductive cap layer (60) delineated in a front contact grid configuration sealingly extends through the AR coating (54) to the window layer (52). An ohmic metal contact (64) is evaporated over and seals the cap layer (60) and the contiguous areas of the AR coating (54). The contact grid interface at which the cap layer (60) contacts the window layer (52) is sealed by the AR coating (54) and the contact (64). The photocell (40) is fabricated by forming, delineating and etching the cap layer (60), forming the AR coating (54) and then forming the contact (64) by evaporation of metal.
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