Invention Grant
- Patent Title: Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
- Patent Title (中): 砷化镓/砷化铝镓光电池包括环境密封的欧姆接触网格界面和制造电池的方法
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Application No.: US968778Application Date: 1992-10-30
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Publication No.: US5330585APublication Date: 1994-07-19
- Inventor: Kou-I Chang , Bruce T. Cavicchi
- Applicant: Kou-I Chang , Bruce T. Cavicchi
- Applicant Address: CA Sylmar
- Assignee: Spectrolab, Inc.
- Current Assignee: Spectrolab, Inc.
- Current Assignee Address: CA Sylmar
- Main IPC: H01L31/04
- IPC: H01L31/04 ; H01L31/0216 ; H01L31/0693 ; H01L31/18
Abstract:
A photocell (40) includes a photovoltaic or otherwise photosensitive layer structure (44) on which a passivation or window layer (52) of an environmentally sensitive material such as aluminum gallium arsenide (AlGaAs) and an antireflection (AR) coating (54) are formed. An electrically conductive cap layer (60) delineated in a front contact grid configuration sealingly extends through the AR coating (54) to the window layer (52). An ohmic metal contact (64) is evaporated over and seals the cap layer (60) and the contiguous areas of the AR coating (54). The contact grid interface at which the cap layer (60) contacts the window layer (52) is sealed by the AR coating (54) and the contact (64). The photocell (40) is fabricated by forming, delineating and etching the cap layer (60), forming the AR coating (54) and then forming the contact (64) by evaporation of metal.
Public/Granted literature
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Information query
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