发明授权
- 专利标题: Substrate for circuit board including the glass fibers as reinforcing material
- 专利标题(中): 电路板基板,包括玻璃纤维作为增强材料
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申请号: US148330申请日: 1993-11-08
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公开(公告)号: US5334645A公开(公告)日: 1994-08-02
- 发明人: Kiyotaka Komori , Seishiro Yamakawa , Shigeru Yamamoto , Jun Naka , Tadashi Kokubo
- 申请人: Kiyotaka Komori , Seishiro Yamakawa , Shigeru Yamamoto , Jun Naka , Tadashi Kokubo
- 申请人地址: JPX Osaka JPX Ohtsu
- 专利权人: Matsushita Electric Works, Ltd.,Nippon Electric Glass Co., Ltd.
- 当前专利权人: Matsushita Electric Works, Ltd.,Nippon Electric Glass Co., Ltd.
- 当前专利权人地址: JPX Osaka JPX Ohtsu
- 优先权: JPX3-017747 19910208; JPX3-142163 19910613; JPX3-143465 19910614; JPX3-145901 19910618
- 主分类号: C03C13/00
- IPC分类号: C03C13/00 ; H05K1/03 ; C08K3/40 ; C03C13/02
摘要:
A glass fiber forming composition exhibits a remarkably high dielectric constant .epsilon..sub.r as well as superior chemical resistance, yet it is readily spun into glass fibers. The composition is characterized to show a devitrification temperature which is lower than a spinning temperature at which the glass composition exhibits a viscosity of 10.sup.2.5 poise, so as to be readily spun into corresponding glass fibers. The composition consists essentially of 40 to 65 mol % of SiO.sub.2 ; 20 to 45 mol % of at least one component selected from the group consisting of MgO, CaO, SrO and BaO; 5 to 25 mol % of at least one component selected from the group consisting of TiO.sub.2 and ZrO.sub.2 ; and 0.5 to 15 mol % of NbO.sub.5/2 as calculated from an incorporated amount of Nb.sub.2 O.sub.5. Alternately, the composition consist essentially of 40 to 65 mol % of SiO.sub.2 ; 20 to 45 mol % of at least one component selected from the group consisting of CaO, SrO and BaO; 5 to 25 mol % of at least one component selected from the group consisting of TiO.sub.2 and ZrO.sub.2 ; 0.5 to 15 mol % of NbO.sub.5/2 as calculated from an incorporated amount of Nb.sub.2 O.sub.5 ; and 0.5 to 15 mol % of AlO.sub.3/2 as calculated from an incorporated amount of Al.sub.2 O.sub.3. The composition is also characterized to incorporate at least 85 mol % of a total amount of the oxides and have a dielectric constant [.epsilon..sub.r ] of 9 or more at 1 MHz and 25.degree. C.
公开/授权文献
- US6084295A Semiconductor device and circuit board used therein 公开/授权日:2000-07-04
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