发明授权
US5336907A MOS gate controlled thyristor having improved turn on/turn off
characteristics
失效
MOS栅极控制晶闸管具有改善的导通/截止特性
- 专利标题: MOS gate controlled thyristor having improved turn on/turn off characteristics
- 专利标题(中): MOS栅极控制晶闸管具有改善的导通/截止特性
-
申请号: US969491申请日: 1992-10-30
-
公开(公告)号: US5336907A公开(公告)日: 1994-08-09
- 发明人: Hidetoshi Nakanishi , Yasunori Usui
- 申请人: Hidetoshi Nakanishi , Yasunori Usui
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX3-311422 19911031
- 主分类号: H01L29/745
- IPC分类号: H01L29/745 ; H01L29/749 ; H01L29/74 ; H01L29/10 ; H01L29/78
摘要:
A gate electrode includes a first region formed in an OFF gate region and a second region formed in an ON gate region. A P-channel region is formed in the OFF gate region and an N-channel region is formed in the ON gate region to separate these gate regions. Since a P.sup.- -type channel region of low impurity concentration is formed at an end of a P-type base region in which the N-channel region is formed, the impurity concentration of the P-type base region can be increased and thus turn-off characteristic is improved.
公开/授权文献
- US6067374A Seal detection system and method 公开/授权日:2000-05-23