发明授权
- 专利标题: Method of wet etching of polyimide
- 专利标题(中): 聚酰亚胺湿法蚀刻方法
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申请号: US821632申请日: 1992-01-16
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公开(公告)号: US5342736A公开(公告)日: 1994-08-30
- 发明人: Ker-Ming Chen , Tsung-Hsiung Wang , Shing-Shing King , Tzong-Ming Lee
- 申请人: Ker-Ming Chen , Tsung-Hsiung Wang , Shing-Shing King , Tzong-Ming Lee
- 申请人地址: TWX
- 专利权人: Industrial Technology Research Institute
- 当前专利权人: Industrial Technology Research Institute
- 当前专利权人地址: TWX
- 主分类号: H05K1/00
- IPC分类号: H05K1/00 ; H05K1/03 ; H05K3/00 ; H05K3/46 ; G03C1/93
摘要:
A method of wet etching of polyimide comprising the steps of(a) cleaning a substrate for coating;(b) coating a polyamic acid varnish onto said cleaned substrate;(c) thermal curing the varnish in (b) to form a polyimide layer on the substrate;(d) coating a polyamide-imide varnish onto the layer in (c);(e) curing the varnish in (d),(f) coating a layer of photoresist onto the coated substrate;(g) masked exposing;(h) image developing on said substrate; and(i) wet etching the unprotected portion in the layers of polyimide and polyamide-imide to form a staircase pattern on the substrate.
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