公开(公告)号：US5342736A

公开(公告)日：1994-08-30

申请号：US821632

申请日：1992-01-16

Applicant: Ker-Ming Chen ,  Tsung-Hsiung Wang ,  Shing-Shing King ,  Tzong-Ming Lee

Inventor： Ker-Ming Chen ,  Tsung-Hsiung Wang ,  Shing-Shing King ,  Tzong-Ming Lee

IPC: H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/46 ,  G03C1/93

CPC classification number: H05K3/002 ,  H05K1/0346 ,  H05K2201/0166 ,  H05K2201/0195 ,  H05K2201/09845 ,  H05K3/4644 ,  H05K3/4676

Abstract: A method of wet etching of polyimide comprising the steps of(a) cleaning a substrate for coating;(b) coating a polyamic acid varnish onto said cleaned substrate;(c) thermal curing the varnish in (b) to form a polyimide layer on the substrate;(d) coating a polyamide-imide varnish onto the layer in (c);(e) curing the varnish in (d),(f) coating a layer of photoresist onto the coated substrate;(g) masked exposing;(h) image developing on said substrate; and(i) wet etching the unprotected portion in the layers of polyimide and polyamide-imide to form a staircase pattern on the substrate.

Abstract translation: 一种湿法蚀刻聚酰亚胺的方法，包括以下步骤：（a）清洗用于涂布的基材; （b）将聚酰胺酸清漆涂布在所述清洁的基材上; （c）（b）中的清漆热固化以在基材上形成聚酰亚胺层; （d）在（c）中的层上涂布聚酰胺 - 酰亚胺清漆; （e）在（d）中固化清漆，（f）将一层光致抗蚀剂涂覆在涂覆的基材上; （g）屏蔽曝光; （h）在所述衬底上显影; 和（i）湿式蚀刻聚酰亚胺和聚酰胺 - 酰亚胺层中的未保护部分以在基材上形成阶梯图案。