The present invention relates to a semiconductor memory device, and more particularly to a dynamic random access memory for accomplishing high speed data access by supplying a plurality of row address strobe signals to a chip. A plurality of row address strobe signals are supplied to a plurality of pins, and each row address strobe signal is sequentially supplied with an active signal during a data access operation. Therefore, data in a plurality of memory cell arrays is accessed during one access cycle time. Thus, since a large number of random data are provided, the data access time decreases and the performance of a system can be greatly improved.