Invention Grant
- Patent Title: Image sensor and method of manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US936837Application Date: 1992-08-28
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Publication No.: US5348892APublication Date: 1994-09-20
- Inventor: Hiroyuki Miyake , Tsutomu Abe , Hisao Ito , Hiroyuki Hotta , Yasumoto Shimizu , Yoshihiko Sakai
- Applicant: Hiroyuki Miyake , Tsutomu Abe , Hisao Ito , Hiroyuki Hotta , Yasumoto Shimizu , Yoshihiko Sakai
- Applicant Address: JPX Tokyo
- Assignee: Fuji Xerox Co., Ltd.
- Current Assignee: Fuji Xerox Co., Ltd.
- Current Assignee Address: JPX Tokyo
- Priority: JPX2-108920 19900426; JPX2-108921 19900426; JPX2-116870 19900508; JPX2-125746 19900526
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N3/15 ; H01L31/18
Abstract:
An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
Public/Granted literature
- US5927280A Mask Public/Granted day:1999-07-27
Information query
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