摘要:
A thin-film type photoelectric conversion device for use in an image input unit of facsimile equipment, a scanner and the like, which uses a thin-film semiconductor as a phoconductive layer to reading not only a monochromatic image but also a color image with high resolution. A photoelectric conversion device having a photoconductive layer disposed between opposing electrodes, in which a surface facing in a direction perpendicular to a direction of film deposition of the photoconductive layer acting as a light-receiving surface.
摘要:
An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disposed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
摘要:
An image sensor having an photodetecting element array including a plurality of blocks linearly arrayed in a main scan direction, each block consisting of a plurality of photodetecting elements, a plurality of switching elements for transferring every block charges generated in the photodetecting elements, and drive ICs for outputting the charges in the form of image signals. In the image sensor, the switching elements in a block of the photodetecting element array and the switching elements in another block located adjacent to the former block are connected by wires in such a way that the switching elements closest to each other between the blocks are interconnected, the switching elements next close to each other are interconnected, and so on. The wires connecting from the switching elements in a block to the switching elements in blocks on both sides of the former block are disposed oppositely with respect to the main scan direction, and are disclosed in such a way that the shortest wire connecting the switching elements is located closest to the photodetecting element array, the next short wire is located next close to the photodetecting element array, and so on.
摘要:
A specific reflection area 42 on a paper surface 37a is irradiated with light from a light source 41 via nor not via a lens 43. A photoelectric conversion element 44 is placed on a focal surface in the rearward of the lens 43 and out of the light reflected (including scattering light and diffusion light) from the reflection area 42 on the paper surface 37a, only the whole light reflected within a predetermined angular range is received by the photoelectric conversion element 44 via the lens 43. The density of the image formed on the paper surface 37a is measured from the light reception output. When the paper surface 37a is irradiated with light from the light source 41 via the lens 43, the light source 41 is placed backward from the focal surface 43b in the rearward of the lens 43.
摘要:
A method of manufacturing an image sensor comprising light-receiving elements, thin film transistor switching elements, and a group of lines, in which the metal electrode portion of each light-receiving element, the source and drain electrode portions of each thin film transistor switching element, and the intermediate ground wiring layer of the group of wiring lines can be formed simultaneously. As a result, the image sensor can be prepared with ease under an efficient process.
摘要:
A device for photoelectric conversion and a process for fabricating the device are provided. The device exhibits superior dark current characteristics, and therefore a superior contrast ratio. The device is arranged to reduce or eliminate the vertical component of an electric field under an area where an ohmic contact, rather than a Schottky barrier, exists. The device can be fabricated using process equipment that sputters one or more of the device layers, including the wiring metal.
摘要:
Disclosed is a color image sensor of the type that reads color images with the aid of filters that absorb light of different colors (e.g. red, green and blue) and that are provided over arrays of light-receiving devices formed in a plurality of rows on a common substrate. The color image sensor includes a substrate, light-receiving devices formed on the substrate, thin-film transistors that are connected to the light-receiving devices and that are formed on the substrate, an insulating layer that covers the thin-film transistors and the light-receiving devices, a color filter formed on the insulating layer in such a position that it covers the light-receiving devices, and a light-shielding layer formed on the insulating layer in such a position that it covers the thin-film transistors.
摘要:
A method for producing a target substance by utilizing a microorganism by culturing the microorganism in a medium to produce and accumulate the target substance in the medium and collecting the target substance from the culture is described. The microorganism is a mutant recombinant strain in which maltose assimilation is controlled by reducing or eliminating the interaction between IIAGlc protein of the glucose PTS and a protein involved in non-PTS uptake of maltose.
摘要:
A cosmetic composition includes a boron nitride complex powder in which particles of metal oxide are attached to at least a part of the surface of a base material consisting of boron nitride. The metal oxide is preferably a combination of titanium dioxide, yellow iron oxide, red iron oxide and black iron oxide. Preferred compositions include liquid or powder foundation, lipstick, eye shadow, eye liner and mascara. The cosmetic composition including a cosmetic powder is capable of imparting smoothness to the touch, lively finish with fine texture and natural glow, and adhesion to the skin when applied to the skin.
摘要:
A coryneform bacterium that is modified by using a yggB gene so that L-glutamic acid-producing ability is enhanced as compared to a non-modified strains is cultured in a medium to cause accumulation of L-glutamic acid in the medium or bacterial cells, and L-glutamic acid is collected from the medium or cells.