发明授权
US5354389A Method of manufacturing silicon steel sheet having grains precisely
arranged in Goss orientation
失效
制造具有以高斯取向精确排列的晶粒的硅钢板的方法
- 专利标题: Method of manufacturing silicon steel sheet having grains precisely arranged in Goss orientation
- 专利标题(中): 制造具有以高斯取向精确排列的晶粒的硅钢板的方法
-
申请号: US920127申请日: 1992-07-24
-
公开(公告)号: US5354389A公开(公告)日: 1994-10-11
- 发明人: Kenichi Arai , Kazushi Ishiyama , Yasushi Tanaka , Akira Hiura , Misao Namikawa
- 申请人: Kenichi Arai , Kazushi Ishiyama , Yasushi Tanaka , Akira Hiura , Misao Namikawa
- 申请人地址: JPX Tokyo
- 专利权人: NKK Corporation
- 当前专利权人: NKK Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-210363 19910729; JPX3-210364 19910729; JPX3-210365 19910729; JPX4-185374 19920713; JPX4-185375 19920713; JPX4-185376 19920713
- 主分类号: C21D1/76
- IPC分类号: C21D1/76 ; C21D8/12 ; C22C38/02 ; H01F1/04
摘要:
The present invention provides a method of manufacturing a silicon steel sheet having grains precisely arranged in the Goss orientation, comprising the steps of preparing a steel material containing 0.01 wt. % or less of C, 2.5 to 7.0 wt. % of Si, 0.01 wt. % or less of S, 0.01 wt. % or less of Al, 0.01 wt. % or less of N, subjecting the steel material to hot rolling maintained 1000.degree. C. or higher such that the temperature of the rolled material at an end of the hot rolling step falls within the range of 700 to 950.degree. C., subjecting the steel material to a primary cold rolling process at a rolling reduction of 30 to 85%, annealing the steel material at a temperature of 600.degree. to 900.degree. C., subjecting the steel material to a secondary cold rolling process at a rolling reduction of 40 to 80%, annealing the steel material again at a temperature of 600.degree.to 900.degree. C., subjecting the steel material to a tertiary cold rolling process at a rolling reduction of 50 to 75%, and annealing the steel material in a reducing atmosphere, or in a non-oxidizing atmosphere having an oxygen partial pressure of 0.5 Pa or less, or in a vacuum having an oxygen partial pressure of 0.5 Pa or less, at a temperature in the range of 1000.degree. to 1300.degree. C.
公开/授权文献
- US5942755A Infrared optical gas-measuring system 公开/授权日:1999-08-24
信息查询