A process and apparatus for making high purity aluminum nitride from organometallic aluminum, such as an alkylaluminum compound. A gaseous alkylaluminum compound and gaseous ammonia are introduced into a heated reaction zone where the gases are mixed and high purity aluminum nitride is produced. The high purity aluminum nitride is collected in the form of a powder or deposited as a thick, dense layer on an appropriate substrate mounted in the reaction chamber. A carrier gas such as hydrogen gas, may be used to conduct the alkylaluminum compound from a suitable reservoir containing liquid alkylaluminum compound to the reaction chamber. A preferred alkylaluminum compound is triethylaluminum.