发明授权
- 专利标题： Semiconductor memory with trench capacitor
- 专利标题（中）： 具有沟槽电容的半导体存储器
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申请号： US93033申请日： 1993-07-19
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公开(公告)号： US5357131A公开(公告)日： 1994-10-18
- 发明人: Hideo Sunami , Tokuo Kure , Yoshifumi Kawamoto , Masao Tamura , Masanobu Miyao
- 申请人： Hideo Sunami , Tokuo Kure , Yoshifumi Kawamoto , Masao Tamura , Masanobu Miyao
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX57-36418 19820310; JPX58-177952 19830928; JPX58-246948 19831228; JPX59-81750 19840425
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/308 ; H01L27/108 ; H01L27/12
摘要：
A semiconductor memory wherein a part of each capacitor is formed on side walls of an island region surrounded with a recess formed in a semiconductor substrate, and the island region and other regions are electrically isolated by the recess.
公开/授权文献
- US6062743A Splicing different optical fiber types 公开/授权日：2000-05-16
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