A semiconductor memory device includes a plurality of memory cell arrays, a plurality of decoders for decoding a first address of memory addresses, each of the decoders being connected to a corresponding memory cell array, and a plurality of sense amplifiers, each connected to a corresponding memory cell array. Also included are a decoder for decoding a second address of the memory addresses, the decoder being connected to every memory cell array, to be shared by every memory cell array, a plurality of redundancy memory cells, each of which is arranged for a corresponding memory cell array, and a plurality of programming circuits, each, arranged relative to a corresponding memory cell array to receive the first memory address and output a signal of a predetermined logic level corresponding to a defective memory cell in a memory cell array. Further, there is included a programmable decoder for receiving the second address and signal from the programming circuits, for changing a decoding state of the second address according to the logic level of the output signal from the programming circuits and for outputting a redundancy memory cell select signal which selects a redundancy memory cell in place of a specified defective memory cell.