Invention Grant
US5360693A Positive o-quinone diazide photoresist containing base copolymer
utilizing monomer having anhydride function and further monomer that
increases etch resistance
失效
含邻苯醌二叠氮化物光致抗蚀剂含有具有酸酐官能团的单体的基础共聚物和增加耐蚀性的其它单体
- Patent Title: Positive o-quinone diazide photoresist containing base copolymer utilizing monomer having anhydride function and further monomer that increases etch resistance
- Patent Title (中): 含邻苯醌二叠氮化物光致抗蚀剂含有具有酸酐官能团的单体的基础共聚物和增加耐蚀性的其它单体
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Application No.: US59518Application Date: 1993-05-10
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Publication No.: US5360693APublication Date: 1994-11-01
- Inventor: Michael Sebald , Recai Sezi , Rainer Leuschner , Seigfried Birkle , Hellmut Ahhe
- Applicant: Michael Sebald , Recai Sezi , Rainer Leuschner , Seigfried Birkle , Hellmut Ahhe
- Applicant Address: DEX Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DEX Munich
- Priority: EPX89104950 19890320
- Main IPC: G03F7/023
- IPC: G03F7/023 ; G03F7/075 ; G03F15/06
Abstract:
An aqueous-alkaline developable photoresist suitable for a lithography in deep ultraviolet light and having a structural resolution in the sub-.mu.m range. The photoresist contains a developable base polymer that comprises anhydride functions that act as solubility-mediating groups and also contains a photo-active component. In addition to being constructed of monomers carrying anhydride groups, the base polymer can be constructed of further monomers that produce designationally defined properties in the photoresist, for example, exhibit resistance to plasma etching processes. The photoresist of the present invention is therefore very versatile.
Public/Granted literature
- USD398260S Mount for a trophy Public/Granted day:1998-09-15
Information query
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