公开(公告)号：US20240361695A1

公开(公告)日：2024-10-31

申请号：US18644370

申请日：2024-04-24

申请人： ASM IP Holding B.V.

发明人： João Ricardo Antunes Afonso ,  Yiting Sun ,  Fanyong Ran ,  Jerome Samuel Nicolas ,  Zecheng Liu

IPC分类号： G03F7/16 ,  G03F7/004 ,  G03F7/075

CPC分类号： G03F7/167 ,  G03F7/0043 ,  G03F7/0751 ,  G03F7/0755

摘要： Methods of forming structures including an adhesion layer and structures including the adhesion layer are disclosed. The adhesion layer may include nitrogen. The method can include forming a metal oxide resist overlying and in contact with the adhesion layer. Exemplary methods further include forming the photoresist underlayer.

公开(公告)号：US20240345483A1

公开(公告)日：2024-10-17

申请号：US18601583

申请日：2024-03-11

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Naoki KOBAYASHI ,  Nobuhiro Nagamachi ,  Kenta Ishiwata ,  Daisuke Kori

IPC分类号： G03F7/11 ,  G03F7/075 ,  G03F7/09

CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/094

摘要： The present invention is a method for forming a resist underlayer film, including the steps of: (i) coating a substrate with a composition for forming a resist underlayer film containing a metal compound having a metal-oxygen covalent bond and an organic solvent; (ii) forming a cured film by heating the coated substrate at a temperature of 100° C. or higher and 600° C. or lower for 10 seconds to 7,200 seconds for curing; and (iii) forming a resist underlayer film by irradiating the cured film with plasma, where a compound containing at least one crosslinking group represented by the following general formulae (a-1) to (a-4), (b-1) to (b-4), and (c-1) to (c-3) is used as the metal compound. This provides: a method for forming a resist underlayer film that contains metal and that exhibits both high filling property and high dry etching resistance; and a patterning process using the method.

公开(公告)号：US20240337943A1

公开(公告)日：2024-10-10

申请号：US18575890

申请日：2022-08-01

申请人： Dow Silicones Corporation

发明人： Peng-Fei Fu ,  Wonbum Jang ,  John Ell ,  Myunhwa Chung

IPC分类号： G03F7/075 ,  C08G77/38

CPC分类号： G03F7/0757 ,  C08G77/38

摘要： A composition contains a photocurable resin that has a weight-average molecular weight of 3000-50000 Daltons, a glass transition temperature of at least 100 degrees Celsius and contains the following siloxane units: 50-80 mole-percent (HSiC>3/2). 10 to 30 mole-percent (R*SiC>3/2), 10 to 40 mole-percent (Ar*SiC>3/2), and 20.0 mole-percent or less of Si—OZ content, where mole-percent values are relative to moles of silicon atoms in the photocurable resin, R* is a photocurable group. Ar* in each occurrence is selected from a group of halogen-substituted aryl groups and polyaryl groups: Z in each occurrence is selected from hydrogen and alkyl groups. and subscripts x and y are independently in each occurrence either one or 2.

公开(公告)号：US20240319600A1

公开(公告)日：2024-09-26

申请号：US18279790

申请日：2022-03-02

申请人： Mitsubishi Gas Chemical Company, Inc.

发明人： Junya HORIUCHI ,  Hiroaki YAMAMOTO ,  Tadashi OMATSU ,  Takashi SATO ,  Masatoshi ECHIGO

IPC分类号： G03F7/11 ,  G03F7/075

CPC分类号： G03F7/11 ,  G03F7/0752

摘要： In order to provide a film forming material for lithography or the like that has high film formability and solvent solubility, is applicable to a wet process, is excellent in curability, film heat resistance, film etching resistance, embedding properties to a substrate having difference in level, and film flatness, and is useful for forming a photoresist underlayer film, a film forming material for lithography according to the present disclosure contains a compound having an amino group bonded to an aromatic ring, and the compound is one represented by, for example, formula (1A), formula (1B), formula (2), formula (3), formula (4), or the like, as described in the specification.

公开(公告)号：US20240319598A1

公开(公告)日：2024-09-26

申请号：US18594575

申请日：2024-03-04

申请人： SHIN-ETSU CHEMICAL CO., LTD.

发明人： Takehiro SATO ,  Shun Kikuchi ,  Ryo Mitsui ,  Seiichiro Tachibana

IPC分类号： G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20

CPC分类号： G03F7/0758 ,  G03F7/094 ,  G03F7/167 ,  G03F7/2016 ,  G03F7/2037

摘要： The present invention is a composition for forming a silicon-containing resist underlayer film, containing a condensation reaction-type thermosetting silicon-containing material (Sx), being a polysiloxane resin, where the material has a non-condensation reactive organic group that reacts with a radical chemical species, the resin includes more than 0 and 70 mol % or less of one or more of a repeating unit represented by the following general formula (Sx-4) and a repeating unit represented by the general formula (Sx-5), and the organic group remains unreacted after a heat-curing reaction of the polysiloxane resin. This provides: a composition for forming a resist underlayer film containing a thermosetting silicon-containing material in photolithography using a high-energy beam, the material improving sensitivity, LWR, and resolution of an upper layer resist and further contributing to the prevention of pattern collapse; and a patterning process using the composition for forming a resist underlayer film.

公开(公告)号：US12099300B2

公开(公告)日：2024-09-24

申请号：US16598264

申请日：2019-10-10

申请人： Rohm and Haas Electronic Materials LLC

发明人： Sheng Liu ,  James F. Cameron ,  Shintaro Yamada ,  Iou-Sheng Ke ,  Keren Zhang ,  Daniel Greene ,  Paul J. LaBeaume ,  Li Cui ,  Suzanne M. Coley

IPC分类号： G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： G03F7/11 ,  G03F7/0752 ,  G03F7/091 ,  G03F7/2016

摘要： Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

公开(公告)号：US12099297B2

公开(公告)日：2024-09-24

申请号：US17452343

申请日：2021-10-26

申请人： TOKYO OHKA KOGYO CO., LTD. ,  Tokyo University of Science Foundation

发明人： Kunihiro Noda ,  Dai Shiota ,  Koji Arimitsu

IPC分类号： G03F7/004 ,  C07D233/60 ,  C07D311/86 ,  C07F9/06 ,  G03F7/075

CPC分类号： G03F7/0045 ,  C07D233/60 ,  C07D311/86 ,  C07F9/067 ,  G03F7/0757

摘要： An energy-sensitive composition including a polysilane, a base generator, and a solvent, the base generator including a compound represented by formula (b1) and a photo base generator:




in which Rb1 to Rb3 each independently represents a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfonato group, phosphino group, phosphinyl group, phosphonato group or organic group; Rb4 and Rb5 each independently represent a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonato group, phosphino group, phosphinyl group, phosphono group, phosphonato group or aliphatic group; and Rb6 represents a hydrogen atom, alkyl group or alkoxy group.

公开(公告)号：US20240302738A1

公开(公告)日：2024-09-12

申请号：US18667993

申请日：2024-05-17

申请人： ILLUMINA, INC.

发明人： Jeffrey S. Fisher ,  Brian D. Mather ,  Maria Candelaria Rogert Bacigalupo ,  Justin Fullerton ,  Ludovic Vincent ,  Lewis J. Kraft ,  Sahngki Hong ,  Boyan Boyanov ,  M. Shane Bowen ,  Sang Park ,  Wayne N. George ,  Andrew A. Brown ,  Dajun Yuan

IPC分类号： G03F7/00 ,  C08F220/56 ,  C08G77/04 ,  C12Q1/6869 ,  G03F7/004 ,  G03F7/075 ,  G03F7/16

CPC分类号： G03F7/0002 ,  C08F220/56 ,  C08G77/04 ,  C12Q1/6869 ,  G03F7/0757 ,  G03F7/165 ,  G03F7/0046

摘要： An example of a flow cell includes a substrate; a first primer set attached to a first region on the substrate, the first primer set including an un-cleavable first primer and a cleavable second primer; and a second primer set attached to a second region on the substrate, the second primer set including a cleavable first primer and an un-cleavable second primer.

公开(公告)号：US20240263025A1

公开(公告)日：2024-08-08

申请号：US18560398

申请日：2022-04-21

申请人： DIC Corporation

发明人： Masaki HATASE ,  Ryohei SHIMIZU ,  Hideya SUZUKI

IPC分类号： C09D7/47 ,  C08F230/08 ,  C09D7/65 ,  G03F7/075

CPC分类号： C09D7/47 ,  C08F230/085 ,  C09D7/65 ,  G03F7/0752

摘要： Provided is a silicone chain-containing polymer functioning as a leveling agent giving high smoothness to a coating film. Specifically, provided is a silicone chain-containing polymer containing, as a polymeric component, at least a polymerizable monomer (1) having a group represented by General Formula (A) below and a polymerizable monomer (2) having a group containing a polyester chain:
wherein R11 are each independently a C1-6 alkyl group or a group represented by —OSi(R14)3 (R14 are each independently a C1-3 alkyl group), R12 are each independently a C1-6 alkyl group, R13 is a C1-6 alkyl group, and x is an integer of 0 or more.

公开(公告)号：US20240255848A1

公开(公告)日：2024-08-01

申请号：US18449156

申请日：2023-08-14

申请人： Geun Su Lee ,  Samsung Electronics Co., Ltd.

发明人： Chawon KOH ,  Yeon Hee SEONG ,  Tsunehiro NISHI ,  Geun Su LEE ,  Sung Jae JUNG ,  Moo Hyun KOH ,  Ji Young PARK ,  Seungyeol BAEK

IPC分类号： G03F7/004 ,  C07F7/22 ,  C07F9/6596 ,  G03F7/075 ,  G03F7/16 ,  G03F7/38 ,  H01L21/027

CPC分类号： G03F7/0045 ,  C07F7/2224 ,  C07F9/6596 ,  G03F7/0757 ,  G03F7/168 ,  G03F7/38 ,  H01L21/0274

摘要： The present disclosure relates to a semiconductor photoresist composition including an organometallic compound represented by Chemical Formula 1 and a solvent, and a method of forming patterns by using the semiconductor photoresist composition.