发明授权
- 专利标题： Method of forming a monocrystalline film having a closed loop step portion on the substrate
- 专利标题（中）： 在基板上形成具有闭环台阶部分的单晶膜的方法
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申请号： US465175申请日： 1990-02-01
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公开(公告)号： US5362672A公开(公告)日： 1994-11-08
- 发明人: Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
- 申请人： Tadahiro Ohmi , Tadashi Shibata , Masaru Umeda
- 申请人地址： JPX Miyagi
- 专利权人： Ohmi; Tadahiro
- 当前专利权人： Ohmi; Tadahiro
- 当前专利权人地址： JPX Miyagi
- 优先权： JPX63-150581 19880617
- 主分类号： C23C14/06
- IPC分类号： C23C14/06 ; H01L21/20 ; H01L21/203 ; H01L21/336 ; H01L21/84
摘要：
A method of manufacturing a semiconductor device, and particularly a method of forming a monocrystalline film on a substrate. The method includes the step of forming a conductor layer having a step portion on the surface of a substrate. The step portion includes a lateral face which surrounds the lower surface of the step portion to form a closed loop. After the conductor layer has been formed on the surface of the substrate, a monocrystalline film is formed directly on the substrate. Specifically, the film is formed on the lower surface of the step portion, while a DC potential is applied to the conductor layer.
公开/授权文献
- US5633224A Low pH granular detergent composition 公开/授权日：1997-05-27
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