摘要:
A gate valve for a thin film forming apparatus. The gate valve includes two adjoining low-pressure chambers and a wall separating the two chambers. The wall includes an aperture and a thin plate for covering the aperture. The thin plate is movable in a direction substantially parallel to the plate surface. The gate valve further includes a voltage supply for applying a direct current between the thin plate and the wall.
摘要:
A method of manufacturing a semiconductor device, and particularly a method of forming a monocrystalline film on a substrate. The method includes the step of forming a conductor layer having a step portion on the surface of a substrate. The step portion includes a lateral face which surrounds the lower surface of the step portion to form a closed loop. After the conductor layer has been formed on the surface of the substrate, a monocrystalline film is formed directly on the substrate. Specifically, the film is formed on the lower surface of the step portion, while a DC potential is applied to the conductor layer.
摘要:
The present invention offers a piping system for supplying ultra-pure water, which comprises a circulation tank to store primary pure water from a primary pure water producing unit, a pump for sending the primary pure water from said circulation tank, an outward pipe, one end of which is connected to a final purifying unit to purify primary pure water from said pump to ultra-pure water, a plurality of connection pipes, each end of which is connected to the other end of said outward pipe, a branching pipe connected between the middle of said connection pipe and the ultra-pure water using unit and having a branching valve to adjust the water quantity, and a return pipe connected between the other end of said connection pipe and said circulation tank, characterized in that means for controlling the output of said pump is provided to keep the water pressure at constant level by detecting the water pressure in said outward pipe, thereby supplying a constant quantity of ultra-pure water to the ultra-pure water using unit at all times, and that ultra-pure water of ultra-high purity can be stably supplied by preventing counterflow from the return pipe to the ultra-pure water using unit.
摘要:
A gate valve for a thin film forming apparatus. The gate valve includes two adjoining low-pressure chambers and a wall separating the two chambers. The wall includes an aperture and a thin plate for covering the aperture. The thin plate is movable in a direction substantially parallel to the plate surface. The gate valve further includes a voltage supply for applying a direct current between the thin plate and the wall.
摘要:
The present invention relates to a semiconductor apparatus adapted to a ultrahigh density integration process. A semiconductor apparatus of the present invention is characterized by including a high concentration impurity layer with the same type of conductivity as that of a semiconductor wafer provided on the back of the semiconductor wafer, and at least one layer of a low resistance electrode provided on said high concentration impurity layer.
摘要:
The reduced pressure surface treatment apparatus according the present invention comprises at least one vacuum chamber and an exhaust unit and a gas supply unit connected thereto, and it is characterized in that it is provided with a holder to hold the specimen, means to bombard the specimen with ions without depositing a thin film on said specimen surface, and means to control kinetic energy of said ions to a small value. The reduced pressure surface treatment method of this invention is characterized in that substances adsorbed on the wafer surface or natural oxide film layers are removed by impinging ions on the wafer surface under a vacuum condition.
摘要:
A semiconductor device comprises metal wirings with its minimum line width of 1 .mu.m or less and on the surface of said metal wiring there is no hillock which has its height equal to or more than 1/4 of the minimum line width of said metal wiring. The main portion of said metal wiring is formed with pure metal, and is supplied in connection portion between the metal wiring and a semiconductor substrate with a barrier layer for preventing any atoms involved in said metal parts from diffusing into the semiconductor substrate.
摘要:
The problem of increase in jitter amounts against increase in delay amounts is solved by a circuit wherein a signal input terminal is connected through a first capacitor to an input terminal of a sense amplifier, a control input terminal is connected through a second capacitor to the input terminal of the sense amplifier, and a common connection point between the input terminal of the sense amplifier and the first and second capacitors is a floating node, and wherein a signal applied through the signal input terminal to the input terminal of the sense amplifier is vertically shifted by a control signal applied to the control input terminal, at least, near a determination threshold of the sense amplifier, thereby controlling a delay amount of an output.
摘要:
To retrieve analog signals at high precision by a maximum or minimum position detection parallel signal processing circuit, a plurality of circuit units in each of which a gate of a transistor is connected to a signal input terminal through first capacitive means, a common connecting point of the gate and the first capacitive means is connected to one terminal side of second capacitive means, and control means, for fluctuating a voltage on the other terminal side of the second capacitive means so as to further increase or decrease a drain current in correspondence to an increase or decrease in the drain current is connected between the drain and the other terminal side of the second capacitive means are provided, a source of each transistor of the plurality of circuit units is commonly connected and is connected to a constant current source, and the maximum or minimum voltage position detection with respect to a signal voltage which is applied to each signal input terminal is performed by a voltage on the other terminal side of the second capacitive means.
摘要:
The real time compression of moving images employing vector quantization is realized using simple hardware and with an optimal compression ratio with respect to the communication line capacity employed. In the operating system, which is provided with a first mechanism (202), comprising a plurality of groups of numerical values, a second mechanism (201), a first circuit (206), a second circuit (206), and a third circuit (210), the second circuit comprises a plurality of fourth circuits divided into two or more groups (210-213, 219, and 301), the fourth circuits have a plurality of input terminals and at least one output terminal, and a mechanism is provided having a structure wherein various signals expressing degrees of similarity are inputted into the plurality of input terminals, only that signal having the largest degree of similarity among the variety of signals expressing degrees of similarity which are inputted is outputted from the output terminal, and the output signal of a predetermined first group among the two or more groups is inputted into an input terminal of a second group, whereby only one first vector having the largest degree of similarity is selected.