发明授权
- 专利标题： Manufacturing method for protective silicon oxynitride film
- 专利标题（中）： 保护性氮氧化硅膜的制造方法
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申请号： US65305申请日： 1993-05-24
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公开(公告)号： US5362686A公开(公告)日： 1994-11-08
- 发明人: Shigeru Harada
- 申请人： Shigeru Harada
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-148185 19900605
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; C23C16/30 ; C23C16/40 ; H01L21/31 ; H01L21/314 ; H01L23/29 ; H01L21/02
摘要：
A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.
公开/授权文献
- USD425185S Plumbing fixture 公开/授权日：2000-05-16
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