发明授权
US5363171A Photolithography exposure tool and method for in situ photoresist
measurments and exposure control
失效
用于原位光刻胶测量和曝光控制的光刻曝光工具和方法
- 专利标题： Photolithography exposure tool and method for in situ photoresist measurments and exposure control
- 专利标题（中）： 用于原位光刻胶测量和曝光控制的光刻曝光工具和方法
-
申请号： US98914申请日： 1993-07-29
-
公开(公告)号： US5363171A公开(公告)日： 1994-11-08
- 发明人: Chris A. Mack
- 申请人： Chris A. Mack
- 申请人地址： MD Ft. Meade
- 专利权人： The United States of America as represented by The Director, National Security Agency
- 当前专利权人： The United States of America as represented by The Director, National Security Agency
- 当前专利权人地址： MD Ft. Meade
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; G03B27/74 ; G03B27/42 ; G03B27/80
摘要：
An apparatus and method is provided for measuring photoresist parameters in situ is disclosed. Transmission and reflectivity detectors are used in a lithographic exposure tool to obtain in situ absorption parameters and reflectivity data. The absorption parameters and reflectivity data are used in a feedback control system that controls the exposure dose used in the lithographic tool.
公开/授权文献
- US6007369A Wire retention contact in an electrical connector 公开/授权日：1999-12-28
信息查询
IPC分类:
