发明授权
- 专利标题： Trilayer lithographic process
- 专利标题（中）： 三层光刻工艺
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申请号： US922983申请日： 1992-07-28
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公开(公告)号： US5370969A公开(公告)日： 1994-12-06
- 发明人: David A. Vidusek
- 申请人： David A. Vidusek
- 申请人地址： JPX Osaka WA Camas
- 专利权人： Sharp Kabushiki Kaisha,Sharp Microelectronics Technology, Inc.
- 当前专利权人： Sharp Kabushiki Kaisha,Sharp Microelectronics Technology, Inc.
- 当前专利权人地址： JPX Osaka WA Camas
- 主分类号： G03F7/26
- IPC分类号： G03F7/26 ; G03F7/09 ; H01L21/027 ; H01L21/033 ; H01L21/30 ; G03C1/492
摘要：
The invention provides a trilayer structure and photolithographic method which permits use of high-resolution optics with a relatively small depth of focus for patterning a substrate. A trilayer lithographic structure in accordance with the invention comprises: (a) an out-gas resistant planarization layer deposited on a substrate; (b) a chemical-vapor-deposited interfacial film formed on the planarization layer; and (c) a photosensitive resist layer of a thickness equal to or less than one micron deposited on the interfacial film. A method in accordance with the invention comprises the steps of: (a) depositing an out-gas resistant planarization layer on a substrate; (b) chemical-vapor-depositing an interfacial film on the planarization layer; and (c) forming a photosensitive resist layer of a thickness equal to or less than one micron on the interfacial film.
公开/授权文献
- US6064108A Integrated interdigitated capacitor 公开/授权日：2000-05-16
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