发明授权
- 专利标题: Circuit and method for sensing depletion of memory cells
- 专利标题(中): 用于感测存储器单元耗尽的电路和方法
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申请号: US932462申请日: 1992-08-20
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公开(公告)号: US5371706A公开(公告)日: 1994-12-06
- 发明人: Steven V. Krentz , David A. Tatman
- 申请人: Steven V. Krentz , David A. Tatman
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: G11C16/34
- IPC分类号: G11C16/34 ; G11C7/00
摘要:
The circuit and method of this invention provide for rapid and reliable detection of depleted or nearly-depleted cells in a column. The circuit is formed on the substrate of a nonvolatile, integrated-circuit memory including rows and columns of memory cells. The drain of each memory cell is connected to a drain-column line and the control gate that is connected to a wordline. One input of a sense amplifier is connected to the drain-column line. The other input of the sense amplifier is connected to a current reference formed on said substrate. The wordline is connected to a wordline test voltage and the output of the sense amplifier is coupled to an output pin of the integrated circuit. The current through the drain-column line is compared with the current through the current reference and, if the current through the drain-column line is sufficiently close to the current through said current reference, a signal is transmitted to an output pin of the integrated circuit.
公开/授权文献
- US6001417A Resist coating method and resist coating apparatus 公开/授权日:1999-12-14
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