发明授权
US5374580A Method of forming high density DRAM having increased capacitance area
due to trench etched into storage capacitor region
失效
形成由于沟槽蚀刻到存储电容器区域中而增加的电容面积的高密度DRAM的方法
- 专利标题: Method of forming high density DRAM having increased capacitance area due to trench etched into storage capacitor region
- 专利标题(中): 形成由于沟槽蚀刻到存储电容器区域中而增加的电容面积的高密度DRAM的方法
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申请号: US129011申请日: 1993-09-30
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公开(公告)号: US5374580A公开(公告)日: 1994-12-20
- 发明人: David A. Baglee , Robert R. Doering , Gregory J. Armstrong
- 申请人: David A. Baglee , Robert R. Doering , Gregory J. Armstrong
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L21/70 ; H01L27/00
摘要:
A dynamic one-transistor read/write memory cell employs a trench capacitor to increase the magnitude of the stored charge. The trench is etched into the silicon surface at a diffused N+ capacitor region similar in structure to the N+ bit line, then thick oxide is grown over the bit line and over the capacitor region, but not in the trench. The upper plate of the capacitor is a polysilicon layer extending into the trench and also forming field plate isolation over the face of the silicon bar. A refractory metal word line forms the gate of the access transistor at a hole in the polysilicon field plate.
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