发明授权
- 专利标题: Random access memory with plurality of amplifier groups
- 专利标题(中): 具有多个放大器组的随机存取存储器
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申请号: US149540申请日: 1993-11-09
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公开(公告)号: US5375088A公开(公告)日: 1994-12-20
- 发明人: Kiyohiro Furutani , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Yoshio Matsuda
- 申请人: Kiyohiro Furutani , Koichiro Mashiko , Kazutami Arimoto , Noriaki Matsumoto , Yoshio Matsuda
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX61-179741 19860730
- 主分类号: G06F11/267
- IPC分类号: G06F11/267 ; G11C7/10 ; G11C29/26 ; G11C29/38 ; G11C7/00
摘要:
A semiconductor memory device operable for reading and writing in a normal mode and in a test mode is divided into memory cell sections each having blocks of memory cells. Data bus lines are connected to the respective blocks, and switches interconnect data bus lines connected to blocks of the different sections. The switch are made conductive during reading and writing in the normal mode and during writing in the test mode, and nonconductive during reading in the test mode. Input data are applied onto the data bus lines connected to one of the blocks for writing in the blocks of the sections simultaneously during writing in the normal mode and in the test mode. In the normal mode, data are read out of the blocks of the sections through the data bus lines connected to the above-mentioned one of the blocks. In the test mode, the data are read out of the blocks of the sections through the data bus lines connected to the respective blocks.
公开/授权文献
- US4823919A Slip construction for supporting tubular members 公开/授权日:1989-04-25
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