发明授权
US5377136A Semiconductor integrated circuit device with built-in memory circuit
group
失效
具有内置存储电路组的半导体集成电路器件
- 专利标题： Semiconductor integrated circuit device with built-in memory circuit group
- 专利标题（中）： 具有内置存储电路组的半导体集成电路器件
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申请号： US076874申请日： 1993-06-15
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公开(公告)号： US5377136A公开(公告)日： 1994-12-27
- 发明人: Yoji Nishio , Fumio Murabayashi , Shoichi Kotoku , Akira Uragami , Manabu Shibata , Yoshitatsu Kojima , Fumiaki Matsuzaki
- 申请人： Yoji Nishio , Fumio Murabayashi , Shoichi Kotoku , Akira Uragami , Manabu Shibata , Yoshitatsu Kojima , Fumiaki Matsuzaki
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Hitachi, Ltd.,Hitachi Microcomputer Engineering, Ltd.
- 当前专利权人： Hitachi, Ltd.,Hitachi Microcomputer Engineering, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX61-258286 19861031; JPX62-71514 19870327
- 主分类号： G11C5/06
- IPC分类号： G11C5/06 ; G11C8/16
摘要：
A semiconductor integrated circuit device with a built-in memory circuit group is disclosed, wherein wiring is started from a data terminal position near a data exchange portion of a memory circuit group to reduce the length of a wiring. Accordingly, an operation speed can be improved by the reduction of wiring capacitance and a ratio of unwired wirings can be reduced by reduction of an occupying ratio of wiring channels.
公开/授权文献
- US6054736A Semiconductor device 公开/授权日：2000-04-25
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